JPS5367372A - Mos-type field effect transistor - Google Patents

Mos-type field effect transistor

Info

Publication number
JPS5367372A
JPS5367372A JP14230376A JP14230376A JPS5367372A JP S5367372 A JPS5367372 A JP S5367372A JP 14230376 A JP14230376 A JP 14230376A JP 14230376 A JP14230376 A JP 14230376A JP S5367372 A JPS5367372 A JP S5367372A
Authority
JP
Japan
Prior art keywords
mos
field effect
effect transistor
type field
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14230376A
Other languages
Japanese (ja)
Other versions
JPS6036109B2 (en
Inventor
Hiroo Masuda
Yoshiaki Kamigaki
Kiyoo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14230376A priority Critical patent/JPS6036109B2/en
Publication of JPS5367372A publication Critical patent/JPS5367372A/en
Publication of JPS6036109B2 publication Critical patent/JPS6036109B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the variation of element characteristics due to the DC bias of a MOSFET by forming a conduction-type impurity layer different with the substrate formed by an ion-implantation method, etc.
COPYRIGHT: (C)1978,JPO&Japio
JP14230376A 1976-11-29 1976-11-29 MOS field effect transistor Expired JPS6036109B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14230376A JPS6036109B2 (en) 1976-11-29 1976-11-29 MOS field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14230376A JPS6036109B2 (en) 1976-11-29 1976-11-29 MOS field effect transistor

Publications (2)

Publication Number Publication Date
JPS5367372A true JPS5367372A (en) 1978-06-15
JPS6036109B2 JPS6036109B2 (en) 1985-08-19

Family

ID=15312224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14230376A Expired JPS6036109B2 (en) 1976-11-29 1976-11-29 MOS field effect transistor

Country Status (1)

Country Link
JP (1) JPS6036109B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5533069A (en) * 1978-08-30 1980-03-08 Fujitsu Ltd Semiconductor device
US4549193A (en) * 1980-09-26 1985-10-22 University Of Toronto Innovations Foundation Field effect transistor device utilizing critical buried channel connecting source and drain

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5533069A (en) * 1978-08-30 1980-03-08 Fujitsu Ltd Semiconductor device
US4549193A (en) * 1980-09-26 1985-10-22 University Of Toronto Innovations Foundation Field effect transistor device utilizing critical buried channel connecting source and drain

Also Published As

Publication number Publication date
JPS6036109B2 (en) 1985-08-19

Similar Documents

Publication Publication Date Title
JPS5367372A (en) Mos-type field effect transistor
JPS5370687A (en) Production of semiconductor device
JPS5333053A (en) Production of semiconductor device
JPS533075A (en) Production of mos structure field effect semiconductor device
JPS5295984A (en) Vertical junction type field effect transistor
JPS542682A (en) Manufacture of mos-type integrated circuit
JPS5253678A (en) Semiconductor integrated circuit and productin of the same
JPS5265689A (en) Semiconductor integrated circuit and its production
JPS53123083A (en) Production of semiconductor device
JPS52100877A (en) Field effect transistor of junction type
JPS5283071A (en) Production of semiconductor device
JPS52130567A (en) Preparation of semiconductor device
JPS52137269A (en) Semiconductor device
JPS5317283A (en) Production of semiconductor device
JPS5360181A (en) Production of mos type field effect transistor
JPS5374383A (en) Manufacture of compound semiconductor device
JPS5310281A (en) Production of mos type semiconductor integrated circuit
JPS5217768A (en) Production method of semi-conductor device
JPS5320775A (en) Production of semiconductor device
JPS52144982A (en) Semiconductor device
JPS5229182A (en) Junction type field effect transistor
JPS5315756A (en) Production of semiconductor device
JPS5370678A (en) Production of sos semiconductor device
JPS5380976A (en) Semiconductor device
JPS5339887A (en) Production of semiconductor device