JPS5264877A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5264877A
JPS5264877A JP50140721A JP14072175A JPS5264877A JP S5264877 A JPS5264877 A JP S5264877A JP 50140721 A JP50140721 A JP 50140721A JP 14072175 A JP14072175 A JP 14072175A JP S5264877 A JPS5264877 A JP S5264877A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
resin
trialkyl
exposing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50140721A
Other languages
English (en)
Inventor
Hisashi Muraoka
Masafumi Asano
Taizo Ohashi
Yuzo Shimazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50140721A priority Critical patent/JPS5264877A/ja
Priority to GB1904/79A priority patent/GB1573208A/en
Priority to GB35164/76A priority patent/GB1573206A/en
Priority to DE2639004A priority patent/DE2639004C2/de
Priority to NLAANVRAGE7609602,A priority patent/NL185116C/xx
Publication of JPS5264877A publication Critical patent/JPS5264877A/ja
Priority to US05/927,139 priority patent/US4239661A/en
Priority to US06/213,317 priority patent/US4339340A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP50140721A 1975-11-26 1975-11-26 Production of semiconductor device Pending JPS5264877A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP50140721A JPS5264877A (en) 1975-11-26 1975-11-26 Production of semiconductor device
GB1904/79A GB1573208A (en) 1975-11-26 1976-08-24 Surface treating agent adapted for intermediate products of a semiconductor device
GB35164/76A GB1573206A (en) 1975-11-26 1976-08-24 Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
DE2639004A DE2639004C2 (de) 1975-11-26 1976-08-30 Wäßrige Lösung zur Oberflächenbehandlung von Zwischenprodukten bei der Herstellung von Halbleiterbauelementen
NLAANVRAGE7609602,A NL185116C (nl) 1975-11-26 1976-08-30 Werkwijze voor het behandelen van oppervlakken van tussenprodukten bij het vervaardigen van halfgeleiders.
US05/927,139 US4239661A (en) 1975-11-26 1978-07-21 Surface-treating agent adapted for intermediate products of a semiconductor device
US06/213,317 US4339340A (en) 1975-11-26 1980-12-05 Surface-treating agent adapted for intermediate products of a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50140721A JPS5264877A (en) 1975-11-26 1975-11-26 Production of semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP11040880A Division JPS5635424A (en) 1980-08-13 1980-08-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5264877A true JPS5264877A (en) 1977-05-28

Family

ID=15275151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50140721A Pending JPS5264877A (en) 1975-11-26 1975-11-26 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5264877A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5351971A (en) * 1976-10-21 1978-05-11 Toshiba Corp Manufacture for semiconductor
JPS5474432A (en) * 1977-10-25 1979-06-14 Eastman Kodak Co Method of developing photosensitive quinone diazide composition
JPS589143A (ja) * 1981-04-10 1983-01-19 シツプレ−・カンパニ−・インコ−ポレ−テツド 金属イオンを含まないフオ−トレジスト現像液組成物
JPS5996731A (ja) * 1982-11-25 1984-06-04 Toshiba Corp 半導体装置の製造方法
JPS59219743A (ja) * 1983-05-28 1984-12-11 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト現像液

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5351971A (en) * 1976-10-21 1978-05-11 Toshiba Corp Manufacture for semiconductor
JPS5474432A (en) * 1977-10-25 1979-06-14 Eastman Kodak Co Method of developing photosensitive quinone diazide composition
JPS589143A (ja) * 1981-04-10 1983-01-19 シツプレ−・カンパニ−・インコ−ポレ−テツド 金属イオンを含まないフオ−トレジスト現像液組成物
JPS5996731A (ja) * 1982-11-25 1984-06-04 Toshiba Corp 半導体装置の製造方法
JPS59219743A (ja) * 1983-05-28 1984-12-11 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト現像液

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