JPS5318980A - High breakdown voltage field effect semiconductor device - Google Patents

High breakdown voltage field effect semiconductor device

Info

Publication number
JPS5318980A
JPS5318980A JP9385176A JP9385176A JPS5318980A JP S5318980 A JPS5318980 A JP S5318980A JP 9385176 A JP9385176 A JP 9385176A JP 9385176 A JP9385176 A JP 9385176A JP S5318980 A JPS5318980 A JP S5318980A
Authority
JP
Japan
Prior art keywords
semiconductor device
breakdown voltage
high breakdown
field effect
voltage field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9385176A
Other languages
Japanese (ja)
Other versions
JPS605073B2 (en
Inventor
Kuniyuki Hamano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9385176A priority Critical patent/JPS605073B2/en
Publication of JPS5318980A publication Critical patent/JPS5318980A/en
Publication of JPS605073B2 publication Critical patent/JPS605073B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

PURPOSE: To obtain a MOS type semiconductor device of a high breakdown voltage by providing the impurity diffused layers of the same conductivity type as drain regions around and under the drain regions.
COPYRIGHT: (C)1978,JPO&Japio
JP9385176A 1976-08-05 1976-08-05 High voltage field effect semiconductor device Expired JPS605073B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9385176A JPS605073B2 (en) 1976-08-05 1976-08-05 High voltage field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9385176A JPS605073B2 (en) 1976-08-05 1976-08-05 High voltage field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5318980A true JPS5318980A (en) 1978-02-21
JPS605073B2 JPS605073B2 (en) 1985-02-08

Family

ID=14093905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9385176A Expired JPS605073B2 (en) 1976-08-05 1976-08-05 High voltage field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS605073B2 (en)

Also Published As

Publication number Publication date
JPS605073B2 (en) 1985-02-08

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