JPS5376676A - High breakdown voltage field effect power transistor - Google Patents

High breakdown voltage field effect power transistor

Info

Publication number
JPS5376676A
JPS5376676A JP15241176A JP15241176A JPS5376676A JP S5376676 A JPS5376676 A JP S5376676A JP 15241176 A JP15241176 A JP 15241176A JP 15241176 A JP15241176 A JP 15241176A JP S5376676 A JPS5376676 A JP S5376676A
Authority
JP
Japan
Prior art keywords
field effect
breakdown voltage
power transistor
high breakdown
effect power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15241176A
Other languages
Japanese (ja)
Other versions
JPS5935187B2 (en
Inventor
Ryuichiro Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15241176A priority Critical patent/JPS5935187B2/en
Publication of JPS5376676A publication Critical patent/JPS5376676A/en
Publication of JPS5935187B2 publication Critical patent/JPS5935187B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To improve the dielectric strength between source and drain and increase output power by providing semi-insulation type semiconductor crystal layers between a source region and a drain region and an impurity concentration semiconductor buffer layer.
COPYRIGHT: (C)1978,JPO&Japio
JP15241176A 1976-12-17 1976-12-17 High voltage field effect transistor for power use Expired JPS5935187B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15241176A JPS5935187B2 (en) 1976-12-17 1976-12-17 High voltage field effect transistor for power use

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15241176A JPS5935187B2 (en) 1976-12-17 1976-12-17 High voltage field effect transistor for power use

Publications (2)

Publication Number Publication Date
JPS5376676A true JPS5376676A (en) 1978-07-07
JPS5935187B2 JPS5935187B2 (en) 1984-08-27

Family

ID=15539917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15241176A Expired JPS5935187B2 (en) 1976-12-17 1976-12-17 High voltage field effect transistor for power use

Country Status (1)

Country Link
JP (1) JPS5935187B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61101080A (en) * 1984-10-24 1986-05-19 Hitachi Ltd field effect transistor
JPS6292377A (en) * 1985-10-18 1987-04-27 Hitachi Ltd Field-effect transistor
JPS62206884A (en) * 1986-03-07 1987-09-11 Toshiba Corp Field-effect type semiconductor device and manufacture thereof
US4803526A (en) * 1984-11-02 1989-02-07 Kabushiki Kaisha Toshiba Schottky gate field effect transistor and manufacturing method
JPH0439968A (en) * 1990-06-05 1992-02-10 Mitsubishi Electric Corp Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61185695U (en) * 1985-05-13 1986-11-19

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61101080A (en) * 1984-10-24 1986-05-19 Hitachi Ltd field effect transistor
US4803526A (en) * 1984-11-02 1989-02-07 Kabushiki Kaisha Toshiba Schottky gate field effect transistor and manufacturing method
JPS6292377A (en) * 1985-10-18 1987-04-27 Hitachi Ltd Field-effect transistor
JPS62206884A (en) * 1986-03-07 1987-09-11 Toshiba Corp Field-effect type semiconductor device and manufacture thereof
JPH0439968A (en) * 1990-06-05 1992-02-10 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5935187B2 (en) 1984-08-27

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