JPS5329679A - Junction type field effect semiconductor device - Google Patents

Junction type field effect semiconductor device

Info

Publication number
JPS5329679A
JPS5329679A JP10443276A JP10443276A JPS5329679A JP S5329679 A JPS5329679 A JP S5329679A JP 10443276 A JP10443276 A JP 10443276A JP 10443276 A JP10443276 A JP 10443276A JP S5329679 A JPS5329679 A JP S5329679A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
type field
junction type
effect semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10443276A
Other languages
Japanese (ja)
Inventor
Yasunari Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10443276A priority Critical patent/JPS5329679A/en
Publication of JPS5329679A publication Critical patent/JPS5329679A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To increase gm and inprove high frequency characteristics by tilting the lateral surfaces of groove parts forming gate regions at a required angle with respect to the top surface of a semiconductor substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP10443276A 1976-08-31 1976-08-31 Junction type field effect semiconductor device Pending JPS5329679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10443276A JPS5329679A (en) 1976-08-31 1976-08-31 Junction type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10443276A JPS5329679A (en) 1976-08-31 1976-08-31 Junction type field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5329679A true JPS5329679A (en) 1978-03-20

Family

ID=14380501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10443276A Pending JPS5329679A (en) 1976-08-31 1976-08-31 Junction type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5329679A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5491074A (en) * 1977-12-28 1979-07-19 Seiko Instr & Electronics Ltd Semiconductor device
JPS55104925A (en) * 1979-02-02 1980-08-11 Onahama Sakai Kagaku Kk Manufacture of basic ferric sulfate
US4646115A (en) * 1983-12-20 1987-02-24 U.S. Philips Corporation Semiconductor devices having field-relief regions
US5122851A (en) * 1989-04-03 1992-06-16 Grumman Aerospace Corporation Trench JFET integrated circuit elements

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5491074A (en) * 1977-12-28 1979-07-19 Seiko Instr & Electronics Ltd Semiconductor device
JPS55104925A (en) * 1979-02-02 1980-08-11 Onahama Sakai Kagaku Kk Manufacture of basic ferric sulfate
US4646115A (en) * 1983-12-20 1987-02-24 U.S. Philips Corporation Semiconductor devices having field-relief regions
US5122851A (en) * 1989-04-03 1992-06-16 Grumman Aerospace Corporation Trench JFET integrated circuit elements

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