JPS533081A - Integrated circuit wiring method - Google Patents

Integrated circuit wiring method

Info

Publication number
JPS533081A
JPS533081A JP7638476A JP7638476A JPS533081A JP S533081 A JPS533081 A JP S533081A JP 7638476 A JP7638476 A JP 7638476A JP 7638476 A JP7638476 A JP 7638476A JP S533081 A JPS533081 A JP S533081A
Authority
JP
Japan
Prior art keywords
integrated circuit
circuit wiring
wiring method
forming
gooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7638476A
Other languages
Japanese (ja)
Inventor
Hideo Sunami
Mitsumasa Koyanagi
Toshiaki Masuhara
Norio Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7638476A priority Critical patent/JPS533081A/en
Publication of JPS533081A publication Critical patent/JPS533081A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To perform wiring by using ODE for a wafer os Si [110] plane, forming perpendicular gooves therein and forming a second conductivity type layer on the inside walls therof.
COPYRIGHT: (C)1978,JPO&Japio
JP7638476A 1976-06-30 1976-06-30 Integrated circuit wiring method Pending JPS533081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7638476A JPS533081A (en) 1976-06-30 1976-06-30 Integrated circuit wiring method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7638476A JPS533081A (en) 1976-06-30 1976-06-30 Integrated circuit wiring method

Publications (1)

Publication Number Publication Date
JPS533081A true JPS533081A (en) 1978-01-12

Family

ID=13603831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7638476A Pending JPS533081A (en) 1976-06-30 1976-06-30 Integrated circuit wiring method

Country Status (1)

Country Link
JP (1) JPS533081A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994413A (en) * 1982-11-19 1984-05-31 Nec Kyushu Ltd Semiconductor device
JPS6052392U (en) * 1983-09-16 1985-04-12 工業技術院長 crankless compressor
US5980762A (en) * 1996-09-02 1999-11-09 Mitsubishi Denki Kabushiki Kaisha Method of micromachining a semiconductor
KR20170086119A (en) 2014-11-28 2017-07-25 스미토모 긴조쿠 고잔 가부시키가이샤 Positive electrode active material for nonaqueous electrolyte secondary battery, method for manufacturing same, and nonaqueous electrolyte secondary battery

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994413A (en) * 1982-11-19 1984-05-31 Nec Kyushu Ltd Semiconductor device
JPS6052392U (en) * 1983-09-16 1985-04-12 工業技術院長 crankless compressor
US5980762A (en) * 1996-09-02 1999-11-09 Mitsubishi Denki Kabushiki Kaisha Method of micromachining a semiconductor
KR20170086119A (en) 2014-11-28 2017-07-25 스미토모 긴조쿠 고잔 가부시키가이샤 Positive electrode active material for nonaqueous electrolyte secondary battery, method for manufacturing same, and nonaqueous electrolyte secondary battery
US10388953B2 (en) 2014-11-28 2019-08-20 Sumitomo Metal Minig Co., Ltd. Positive electrode active material for nonaqueous electrolyte secondary battery, method for producing same, and nonaqueous electrolyte secondary battery

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