JPS534778A - Crystal growth method with molecular beam - Google Patents

Crystal growth method with molecular beam

Info

Publication number
JPS534778A
JPS534778A JP7922576A JP7922576A JPS534778A JP S534778 A JPS534778 A JP S534778A JP 7922576 A JP7922576 A JP 7922576A JP 7922576 A JP7922576 A JP 7922576A JP S534778 A JPS534778 A JP S534778A
Authority
JP
Japan
Prior art keywords
molecular beam
crystal growth
growth method
crystal
property
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7922576A
Other languages
Japanese (ja)
Other versions
JPS589796B2 (en
Inventor
Morio Inoue
Tamotsu Uragaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP51079225A priority Critical patent/JPS589796B2/en
Publication of JPS534778A publication Critical patent/JPS534778A/en
Publication of JPS589796B2 publication Critical patent/JPS589796B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE: To improve crystallizable property without losing thickness-controllable property by growing crystal with molecular beam of raw material for crystal to be grown with addition of molecular beam which etches the crystal.
COPYRIGHT: (C)1978,JPO&Japio
JP51079225A 1976-07-02 1976-07-02 Molecular beam crystal growth method Expired JPS589796B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51079225A JPS589796B2 (en) 1976-07-02 1976-07-02 Molecular beam crystal growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51079225A JPS589796B2 (en) 1976-07-02 1976-07-02 Molecular beam crystal growth method

Publications (2)

Publication Number Publication Date
JPS534778A true JPS534778A (en) 1978-01-17
JPS589796B2 JPS589796B2 (en) 1983-02-22

Family

ID=13683956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51079225A Expired JPS589796B2 (en) 1976-07-02 1976-07-02 Molecular beam crystal growth method

Country Status (1)

Country Link
JP (1) JPS589796B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624927A (en) * 1979-08-06 1981-03-10 Nec Corp Method of vapor phase growth of 3-5 group compound semiconductor in periodic table
JPS57173933A (en) * 1981-04-17 1982-10-26 Nippon Telegr & Teleph Corp <Ntt> Growing method for molecular beam
JPS6057918A (en) * 1983-09-09 1985-04-03 Matsushita Electronics Corp Method of growing semiconductor crystal thin-film
JPS6074534A (en) * 1983-09-30 1985-04-26 Hitachi Ltd Method and equipment for forming thin film
KR20190095806A (en) * 2018-02-07 2019-08-16 삼성전자주식회사 Apparatus for Power Conversion and AC to DC Conversion

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624927A (en) * 1979-08-06 1981-03-10 Nec Corp Method of vapor phase growth of 3-5 group compound semiconductor in periodic table
JPS57173933A (en) * 1981-04-17 1982-10-26 Nippon Telegr & Teleph Corp <Ntt> Growing method for molecular beam
JPS6057918A (en) * 1983-09-09 1985-04-03 Matsushita Electronics Corp Method of growing semiconductor crystal thin-film
JPS6074534A (en) * 1983-09-30 1985-04-26 Hitachi Ltd Method and equipment for forming thin film
KR20190095806A (en) * 2018-02-07 2019-08-16 삼성전자주식회사 Apparatus for Power Conversion and AC to DC Conversion

Also Published As

Publication number Publication date
JPS589796B2 (en) 1983-02-22

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