JPS524782A - Liquid phase epitaxial growth method - Google Patents

Liquid phase epitaxial growth method

Info

Publication number
JPS524782A
JPS524782A JP8116475A JP8116475A JPS524782A JP S524782 A JPS524782 A JP S524782A JP 8116475 A JP8116475 A JP 8116475A JP 8116475 A JP8116475 A JP 8116475A JP S524782 A JPS524782 A JP S524782A
Authority
JP
Japan
Prior art keywords
liquid phase
epitaxial growth
growth method
phase epitaxial
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8116475A
Other languages
Japanese (ja)
Inventor
Tamotsu Uragaki
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8116475A priority Critical patent/JPS524782A/en
Publication of JPS524782A publication Critical patent/JPS524782A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To supply most suitable Ga solution by adjusting with a dashboard and thus to obtain even purity additive amount with a small amount of solution.
COPYRIGHT: (C)1977,JPO&Japio
JP8116475A 1975-06-30 1975-06-30 Liquid phase epitaxial growth method Pending JPS524782A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8116475A JPS524782A (en) 1975-06-30 1975-06-30 Liquid phase epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8116475A JPS524782A (en) 1975-06-30 1975-06-30 Liquid phase epitaxial growth method

Publications (1)

Publication Number Publication Date
JPS524782A true JPS524782A (en) 1977-01-14

Family

ID=13738805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8116475A Pending JPS524782A (en) 1975-06-30 1975-06-30 Liquid phase epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS524782A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164525A (en) * 1980-04-23 1981-12-17 Philips Nv Board for liquid epitaxial growth unit and method of growing semiconductor material layer using same
JPS5866326A (en) * 1981-10-15 1983-04-20 Toshiba Corp Liquid phase epitaxial growth
JPS61230319A (en) * 1985-04-04 1986-10-14 Mitsubishi Electric Corp Apparatus for growing liquid phase crystal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830691A (en) * 1971-08-23 1973-04-23

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830691A (en) * 1971-08-23 1973-04-23

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164525A (en) * 1980-04-23 1981-12-17 Philips Nv Board for liquid epitaxial growth unit and method of growing semiconductor material layer using same
JPS5866326A (en) * 1981-10-15 1983-04-20 Toshiba Corp Liquid phase epitaxial growth
JPS61230319A (en) * 1985-04-04 1986-10-14 Mitsubishi Electric Corp Apparatus for growing liquid phase crystal

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