JPS5348675A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5348675A JPS5348675A JP12350076A JP12350076A JPS5348675A JP S5348675 A JPS5348675 A JP S5348675A JP 12350076 A JP12350076 A JP 12350076A JP 12350076 A JP12350076 A JP 12350076A JP S5348675 A JPS5348675 A JP S5348675A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- wiring layers
- disconnection
- converting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE: To facilitate the formation of contact windows of wiring layers and prevent the disconnection of Al wiring layers by converting a silicone resin film to a silicon oxide film through radiation of oxygen plasmas.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51123500A JPS5852330B2 (en) | 1976-10-15 | 1976-10-15 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51123500A JPS5852330B2 (en) | 1976-10-15 | 1976-10-15 | Manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5348675A true JPS5348675A (en) | 1978-05-02 |
| JPS5852330B2 JPS5852330B2 (en) | 1983-11-22 |
Family
ID=14862147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51123500A Expired JPS5852330B2 (en) | 1976-10-15 | 1976-10-15 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5852330B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6230335A (en) * | 1985-07-31 | 1987-02-09 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH05243577A (en) * | 1992-02-26 | 1993-09-21 | Seiko Epson Corp | Method of manufacturing thin film transistor |
-
1976
- 1976-10-15 JP JP51123500A patent/JPS5852330B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6230335A (en) * | 1985-07-31 | 1987-02-09 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH05243577A (en) * | 1992-02-26 | 1993-09-21 | Seiko Epson Corp | Method of manufacturing thin film transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5852330B2 (en) | 1983-11-22 |
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