JPS5397380A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5397380A
JPS5397380A JP1160477A JP1160477A JPS5397380A JP S5397380 A JPS5397380 A JP S5397380A JP 1160477 A JP1160477 A JP 1160477A JP 1160477 A JP1160477 A JP 1160477A JP S5397380 A JPS5397380 A JP S5397380A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
sio
film
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1160477A
Other languages
Japanese (ja)
Inventor
Kinnosuke Okutsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1160477A priority Critical patent/JPS5397380A/en
Publication of JPS5397380A publication Critical patent/JPS5397380A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE: To enhance the dielectric strength and the yielding rate for the MOS transistor, by providing the lamination layer fo SiO2, poly crystal Si, SiO2 and Si3N4 on the semiconductor substrate, having a selective oxidation by using Si3N4 film for the mask and forming the field oxide film.
COPYRIGHT: (C)1978,JPO&Japio
JP1160477A 1977-02-07 1977-02-07 Manufacture of semiconductor device Pending JPS5397380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1160477A JPS5397380A (en) 1977-02-07 1977-02-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1160477A JPS5397380A (en) 1977-02-07 1977-02-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5397380A true JPS5397380A (en) 1978-08-25

Family

ID=11782499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1160477A Pending JPS5397380A (en) 1977-02-07 1977-02-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5397380A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123266A (en) * 1982-12-28 1984-07-17 Toshiba Corp Metal insulator semiconductor transistor and manufacture thereof
JPS6184866A (en) * 1984-10-02 1986-04-30 Nec Corp Semiconductor integrated circuit device
JPS6260243A (en) * 1985-09-09 1987-03-16 Seiko Epson Corp Mos type integrated circuit device
JPH0268930A (en) * 1988-09-02 1990-03-08 Sony Corp Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123266A (en) * 1982-12-28 1984-07-17 Toshiba Corp Metal insulator semiconductor transistor and manufacture thereof
JPS6184866A (en) * 1984-10-02 1986-04-30 Nec Corp Semiconductor integrated circuit device
JPS6260243A (en) * 1985-09-09 1987-03-16 Seiko Epson Corp Mos type integrated circuit device
JPH0268930A (en) * 1988-09-02 1990-03-08 Sony Corp Manufacture of semiconductor device

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