JPS535580A - Field effect type semiconductor device - Google Patents

Field effect type semiconductor device

Info

Publication number
JPS535580A
JPS535580A JP7920476A JP7920476A JPS535580A JP S535580 A JPS535580 A JP S535580A JP 7920476 A JP7920476 A JP 7920476A JP 7920476 A JP7920476 A JP 7920476A JP S535580 A JPS535580 A JP S535580A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
field effect
effect type
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7920476A
Other languages
Japanese (ja)
Inventor
Tatsuya Enomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7920476A priority Critical patent/JPS535580A/en
Publication of JPS535580A publication Critical patent/JPS535580A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To enhance the integration performance by piling partially the 1st gate electrode onto the 2nd gate electrode on the gate insulation film.
COPYRIGHT: (C)1978,JPO&Japio
JP7920476A 1976-07-02 1976-07-02 Field effect type semiconductor device Pending JPS535580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7920476A JPS535580A (en) 1976-07-02 1976-07-02 Field effect type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7920476A JPS535580A (en) 1976-07-02 1976-07-02 Field effect type semiconductor device

Publications (1)

Publication Number Publication Date
JPS535580A true JPS535580A (en) 1978-01-19

Family

ID=13683410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7920476A Pending JPS535580A (en) 1976-07-02 1976-07-02 Field effect type semiconductor device

Country Status (1)

Country Link
JP (1) JPS535580A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130169A (en) * 1979-03-30 1980-10-08 Hitachi Ltd Method of fabricating semiconductor device
US5519244A (en) * 1979-05-25 1996-05-21 Hitachi, Ltd. Semiconductor device having aligned semiconductor regions and a plurality of MISFETs

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130169A (en) * 1979-03-30 1980-10-08 Hitachi Ltd Method of fabricating semiconductor device
US5519244A (en) * 1979-05-25 1996-05-21 Hitachi, Ltd. Semiconductor device having aligned semiconductor regions and a plurality of MISFETs

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