JPS5357769A - Electrostatic induction transistor - Google Patents
Electrostatic induction transistorInfo
- Publication number
- JPS5357769A JPS5357769A JP13280976A JP13280976A JPS5357769A JP S5357769 A JPS5357769 A JP S5357769A JP 13280976 A JP13280976 A JP 13280976A JP 13280976 A JP13280976 A JP 13280976A JP S5357769 A JPS5357769 A JP S5357769A
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic induction
- induction transistor
- source
- junction
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To increase the speed of carrier injection from source to channel by providing a tunnel junction or electron avalanche junction between the source and drain of a vertical electrostatic induction transistor.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13280976A JPS5357769A (en) | 1976-11-04 | 1976-11-04 | Electrostatic induction transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13280976A JPS5357769A (en) | 1976-11-04 | 1976-11-04 | Electrostatic induction transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5357769A true JPS5357769A (en) | 1978-05-25 |
Family
ID=15090076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13280976A Pending JPS5357769A (en) | 1976-11-04 | 1976-11-04 | Electrostatic induction transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5357769A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5671721U (en) * | 1979-11-05 | 1981-06-12 | ||
| JPS56138545U (en) * | 1980-03-19 | 1981-10-20 | ||
| JPS5774227U (en) * | 1980-10-23 | 1982-05-07 | ||
| JPS5961190A (en) * | 1982-09-17 | 1984-04-07 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | semiconductor structure |
| JPS6112063A (en) * | 1984-06-27 | 1986-01-20 | Res Dev Corp Of Japan | Photoelectric conversion device and manufacture thereof |
| JPS62252970A (en) * | 1987-04-18 | 1987-11-04 | Semiconductor Res Found | tunnel injection control thyristor |
| JPS6344765A (en) * | 1987-04-17 | 1988-02-25 | Semiconductor Res Found | Schottky injection electrode type thyristor |
| JPS6399580A (en) * | 1987-10-01 | 1988-04-30 | Semiconductor Res Found | Tunnel injection control semiconductor device |
| JPH0256972A (en) * | 1989-05-18 | 1990-02-26 | Semiconductor Res Found | Tunnel injection type transit-time effect three-terminal semiconductor device |
| JPH03209730A (en) * | 1984-08-08 | 1991-09-12 | Res Dev Corp Of Japan | Tunnel-injection type electrostatic induction transistor |
-
1976
- 1976-11-04 JP JP13280976A patent/JPS5357769A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5671721U (en) * | 1979-11-05 | 1981-06-12 | ||
| JPS56138545U (en) * | 1980-03-19 | 1981-10-20 | ||
| JPS5774227U (en) * | 1980-10-23 | 1982-05-07 | ||
| JPS5961190A (en) * | 1982-09-17 | 1984-04-07 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | semiconductor structure |
| JPS6112063A (en) * | 1984-06-27 | 1986-01-20 | Res Dev Corp Of Japan | Photoelectric conversion device and manufacture thereof |
| JPH03209730A (en) * | 1984-08-08 | 1991-09-12 | Res Dev Corp Of Japan | Tunnel-injection type electrostatic induction transistor |
| JPS6344765A (en) * | 1987-04-17 | 1988-02-25 | Semiconductor Res Found | Schottky injection electrode type thyristor |
| JPS62252970A (en) * | 1987-04-18 | 1987-11-04 | Semiconductor Res Found | tunnel injection control thyristor |
| JPS6399580A (en) * | 1987-10-01 | 1988-04-30 | Semiconductor Res Found | Tunnel injection control semiconductor device |
| JPH0256972A (en) * | 1989-05-18 | 1990-02-26 | Semiconductor Res Found | Tunnel injection type transit-time effect three-terminal semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5222480A (en) | Insulating gate field effect transistor | |
| JPS5357769A (en) | Electrostatic induction transistor | |
| JPS53133379A (en) | Junction-type field effect transistor | |
| JPS5238889A (en) | Vertical junction type field effect transistor | |
| JPS52113684A (en) | Semiconductor device | |
| JPS5435686A (en) | Field effect semiconductor device of junction type | |
| JPS5244574A (en) | Semiconductor device | |
| JPS544083A (en) | Longitudinal field effect transistor and its manufacture | |
| JPS5368174A (en) | Lateral transistor | |
| JPS5346288A (en) | Mis type semiconductor device | |
| JPS538072A (en) | Semiconductor device | |
| JPS5435684A (en) | Junction type field effect transistor | |
| JPS5245278A (en) | Mis type semiconductor device | |
| JPS52127181A (en) | Insulated gate type filed effect transistor | |
| JPS5242080A (en) | Micro channel type insulated gate field effect transistor and process for productin thereof | |
| JPS5245275A (en) | Mis type semiconductor device | |
| JPS5347782A (en) | Production of semiconductor device | |
| JPS534479A (en) | Production of junction type field effect transistor | |
| JPS52156574A (en) | Mis type semiconductor device | |
| JPS5221776A (en) | Semiconductor unit | |
| JPS51123570A (en) | Vertical junction type field dffect transistor production system | |
| JPS549586A (en) | Electrostatic-induction field effect transistor | |
| JPS51117579A (en) | Junction type field effect transistor | |
| JPS526090A (en) | Semiconductor integrated circuit | |
| JPS5229180A (en) | Vertical field effect semiconductive device |