JPS5360587A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5360587A
JPS5360587A JP13604676A JP13604676A JPS5360587A JP S5360587 A JPS5360587 A JP S5360587A JP 13604676 A JP13604676 A JP 13604676A JP 13604676 A JP13604676 A JP 13604676A JP S5360587 A JPS5360587 A JP S5360587A
Authority
JP
Japan
Prior art keywords
heat treatment
production
semiconductor device
over
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13604676A
Other languages
Japanese (ja)
Other versions
JPS6057227B2 (en
Inventor
Yasutaka Ikushima
Mototaka Kamoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13604676A priority Critical patent/JPS6057227B2/en
Publication of JPS5360587A publication Critical patent/JPS5360587A/en
Publication of JPS6057227B2 publication Critical patent/JPS6057227B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Conductive Materials (AREA)

Abstract

PURPOSE: To obtain wiring bodies whose resistance values do not change with heat treatment temperatures with good reproducibility by growing a polycrystalline Si layer having a high resistivity of 105 Ωcm or over on a substrate which is covered selectively with insulation films, depositing a transition metal film over this and forming a metal silicide layer through heat treatment at 400 to 600°C.
COPYRIGHT: (C)1978,JPO&Japio
JP13604676A 1976-11-11 1976-11-11 Manufacturing method of semiconductor device Expired JPS6057227B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13604676A JPS6057227B2 (en) 1976-11-11 1976-11-11 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13604676A JPS6057227B2 (en) 1976-11-11 1976-11-11 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5360587A true JPS5360587A (en) 1978-05-31
JPS6057227B2 JPS6057227B2 (en) 1985-12-13

Family

ID=15165903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13604676A Expired JPS6057227B2 (en) 1976-11-11 1976-11-11 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6057227B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5772383A (en) * 1980-08-27 1982-05-06 Philips Nv Method of fabricating semiconductor device
JPS5975646A (en) * 1982-10-25 1984-04-28 Toshiba Corp Manufacture of semiconductor device
JPS6052044A (en) * 1983-05-06 1985-03-23 テキサス　インスツルメンツ　インコ−ポレイテツド Method of forming metal silicide
JPS6057646A (en) * 1983-09-08 1985-04-03 Seiko Epson Corp semiconductor equipment
JPS60130844A (en) * 1983-12-20 1985-07-12 Toshiba Corp Manufacture of semiconductor device
JPH01138747A (en) * 1981-08-03 1989-05-31 Texas Instr Inc <Ti> Polycrystalline semiconductor lateral diode

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5772383A (en) * 1980-08-27 1982-05-06 Philips Nv Method of fabricating semiconductor device
JPH01138747A (en) * 1981-08-03 1989-05-31 Texas Instr Inc <Ti> Polycrystalline semiconductor lateral diode
JPS5975646A (en) * 1982-10-25 1984-04-28 Toshiba Corp Manufacture of semiconductor device
JPS6052044A (en) * 1983-05-06 1985-03-23 テキサス　インスツルメンツ　インコ−ポレイテツド Method of forming metal silicide
JPS6057646A (en) * 1983-09-08 1985-04-03 Seiko Epson Corp semiconductor equipment
JPS60130844A (en) * 1983-12-20 1985-07-12 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6057227B2 (en) 1985-12-13

Similar Documents

Publication Publication Date Title
JPS5748246A (en) Manufacture of semiconductor device
JPS5314580A (en) Production of semiconductor device
JPS54116184A (en) Manufacture for semiconductor device
JPS5423386A (en) Manufacture of semiconductor device
JPS5378183A (en) Manufacture of semiconductor device
JPS56115557A (en) Manufacture of semiconductor device
JPS5389374A (en) Production of semiconductor device
JPS5524459A (en) Selective formation of silicon
JPS5359385A (en) Production method of semiconductor thermal sensitive element
JPS5271974A (en) Production of semiconductor device
JPS5783047A (en) Polycrystalline semiconductor resistor
JPS57149751A (en) Semiconductor device
JPS5459077A (en) Manufacture of semiconductor device
JPS53141591A (en) Manufacture of semiconductor device
JPS5363986A (en) Production of semiconductor device
JPS5780768A (en) Semiconductor device
JPS57210659A (en) Semiconductor device
JPS5676537A (en) Manufacture of semiconductor device
JPS558036A (en) Electrode formation
JPS52153373A (en) Preparation of semiconductor device
JPS5546533A (en) Method of producing insulating film of silicon oxide
JPS57152175A (en) Semiconductor magneto-electric effect device
JPS52134376A (en) Production of semiconductor device
JPS5352058A (en) Formation of p-type layer
JPS5346292A (en) Production of semiconductor device