JPS5366163A - Selective growth method of semiconductor buried layer - Google Patents

Selective growth method of semiconductor buried layer

Info

Publication number
JPS5366163A
JPS5366163A JP14125176A JP14125176A JPS5366163A JP S5366163 A JPS5366163 A JP S5366163A JP 14125176 A JP14125176 A JP 14125176A JP 14125176 A JP14125176 A JP 14125176A JP S5366163 A JPS5366163 A JP S5366163A
Authority
JP
Japan
Prior art keywords
buried layer
growth method
selective growth
semiconductor buried
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14125176A
Other languages
Japanese (ja)
Inventor
Tetsuo Asano
Motonao Hirao
Kikuo Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14125176A priority Critical patent/JPS5366163A/en
Publication of JPS5366163A publication Critical patent/JPS5366163A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To produce a buried layer by which a smooth wafer surface can be obtained, by preventing the excessive growth by the conventional selective growth method of the buried layer.
COPYRIGHT: (C)1978,JPO&Japio
JP14125176A 1976-11-26 1976-11-26 Selective growth method of semiconductor buried layer Pending JPS5366163A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14125176A JPS5366163A (en) 1976-11-26 1976-11-26 Selective growth method of semiconductor buried layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14125176A JPS5366163A (en) 1976-11-26 1976-11-26 Selective growth method of semiconductor buried layer

Publications (1)

Publication Number Publication Date
JPS5366163A true JPS5366163A (en) 1978-06-13

Family

ID=15287577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14125176A Pending JPS5366163A (en) 1976-11-26 1976-11-26 Selective growth method of semiconductor buried layer

Country Status (1)

Country Link
JP (1) JPS5366163A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5739584A (en) * 1980-08-20 1982-03-04 Sumitomo Electric Ind Ltd Semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5739584A (en) * 1980-08-20 1982-03-04 Sumitomo Electric Ind Ltd Semiconductor device and manufacture thereof

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