JPS5376675A - High breakdown voltage field effect power transistor - Google Patents

High breakdown voltage field effect power transistor

Info

Publication number
JPS5376675A
JPS5376675A JP15240876A JP15240876A JPS5376675A JP S5376675 A JPS5376675 A JP S5376675A JP 15240876 A JP15240876 A JP 15240876A JP 15240876 A JP15240876 A JP 15240876A JP S5376675 A JPS5376675 A JP S5376675A
Authority
JP
Japan
Prior art keywords
field effect
breakdown voltage
power transistor
high breakdown
effect power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15240876A
Other languages
Japanese (ja)
Inventor
Ryuichiro Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15240876A priority Critical patent/JPS5376675A/en
Publication of JPS5376675A publication Critical patent/JPS5376675A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To increase the dielectric strength between source and drain by providing an operating layer adjacently to the end of a depletion layer extending to the drain electrode side and providing a low impurity temperature region within the operating layer in the position not in contact with the drain electrode.
COPYRIGHT: (C)1978,JPO&Japio
JP15240876A 1976-12-17 1976-12-17 High breakdown voltage field effect power transistor Pending JPS5376675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15240876A JPS5376675A (en) 1976-12-17 1976-12-17 High breakdown voltage field effect power transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15240876A JPS5376675A (en) 1976-12-17 1976-12-17 High breakdown voltage field effect power transistor

Publications (1)

Publication Number Publication Date
JPS5376675A true JPS5376675A (en) 1978-07-07

Family

ID=15539848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15240876A Pending JPS5376675A (en) 1976-12-17 1976-12-17 High breakdown voltage field effect power transistor

Country Status (1)

Country Link
JP (1) JPS5376675A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62298182A (en) * 1986-06-18 1987-12-25 Hitachi Ltd Manufacturing method of semiconductor device
JPS6461067A (en) * 1987-09-01 1989-03-08 Nec Corp Field-effect transistor and manufacture thereof
JPH01165174A (en) * 1987-12-21 1989-06-29 Nec Corp Field effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62298182A (en) * 1986-06-18 1987-12-25 Hitachi Ltd Manufacturing method of semiconductor device
JPS6461067A (en) * 1987-09-01 1989-03-08 Nec Corp Field-effect transistor and manufacture thereof
JPH01165174A (en) * 1987-12-21 1989-06-29 Nec Corp Field effect transistor

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