JPS5368570A - Formation method of semiconductor epitaxial film - Google Patents
Formation method of semiconductor epitaxial filmInfo
- Publication number
- JPS5368570A JPS5368570A JP14333876A JP14333876A JPS5368570A JP S5368570 A JPS5368570 A JP S5368570A JP 14333876 A JP14333876 A JP 14333876A JP 14333876 A JP14333876 A JP 14333876A JP S5368570 A JPS5368570 A JP S5368570A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial film
- formation method
- semiconductor epitaxial
- substrate
- placement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Landscapes
- Junction Field-Effect Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To make the supply of epitaxial film forming molecules to substrate crystal surface uniform and obtain a grown layer of an even thickness by beforehand making rough the surface of a support jig for placement of a semiconductor crystal substrate.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14333876A JPS5368570A (en) | 1976-12-01 | 1976-12-01 | Formation method of semiconductor epitaxial film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14333876A JPS5368570A (en) | 1976-12-01 | 1976-12-01 | Formation method of semiconductor epitaxial film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5368570A true JPS5368570A (en) | 1978-06-19 |
Family
ID=15336451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14333876A Pending JPS5368570A (en) | 1976-12-01 | 1976-12-01 | Formation method of semiconductor epitaxial film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5368570A (en) |
-
1976
- 1976-12-01 JP JP14333876A patent/JPS5368570A/en active Pending
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