JPS537179A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- JPS537179A JPS537179A JP8214776A JP8214776A JPS537179A JP S537179 A JPS537179 A JP S537179A JP 8214776 A JP8214776 A JP 8214776A JP 8214776 A JP8214776 A JP 8214776A JP S537179 A JPS537179 A JP S537179A
- Authority
- JP
- Japan
- Prior art keywords
- increase
- thyristor
- gate
- sorten
- rating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE: To increase initial conduction regions hence increase di/dt rating, sorten turn-on time, improve gate sensitivity and reduce latching current by increasing the injection efficiency of PNPN junctions near gate.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8214776A JPS537179A (en) | 1976-07-09 | 1976-07-09 | Thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8214776A JPS537179A (en) | 1976-07-09 | 1976-07-09 | Thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS537179A true JPS537179A (en) | 1978-01-23 |
Family
ID=13766314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8214776A Pending JPS537179A (en) | 1976-07-09 | 1976-07-09 | Thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS537179A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57118671A (en) * | 1981-01-16 | 1982-07-23 | Toshiba Corp | Semiconductor device |
-
1976
- 1976-07-09 JP JP8214776A patent/JPS537179A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57118671A (en) * | 1981-01-16 | 1982-07-23 | Toshiba Corp | Semiconductor device |
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