JPS5372467A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5372467A JPS5372467A JP14804976A JP14804976A JPS5372467A JP S5372467 A JPS5372467 A JP S5372467A JP 14804976 A JP14804976 A JP 14804976A JP 14804976 A JP14804976 A JP 14804976A JP S5372467 A JPS5372467 A JP S5372467A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- restricting
- causes
- temperature rise
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:To manufacture the semiconductor device having a good performance, by restricting the temperature rise of substrate due to causes other than ion collision.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14804976A JPS5372467A (en) | 1976-12-08 | 1976-12-08 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14804976A JPS5372467A (en) | 1976-12-08 | 1976-12-08 | Manufacture for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5372467A true JPS5372467A (en) | 1978-06-27 |
Family
ID=15443989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14804976A Pending JPS5372467A (en) | 1976-12-08 | 1976-12-08 | Manufacture for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5372467A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60183720A (en) * | 1984-03-01 | 1985-09-19 | Mitsubishi Electric Corp | Thin film evaporating apparatus |
| JPS60183721A (en) * | 1984-03-01 | 1985-09-19 | Mitsubishi Electric Corp | Thin film deposition equipment |
-
1976
- 1976-12-08 JP JP14804976A patent/JPS5372467A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60183720A (en) * | 1984-03-01 | 1985-09-19 | Mitsubishi Electric Corp | Thin film evaporating apparatus |
| JPS60183721A (en) * | 1984-03-01 | 1985-09-19 | Mitsubishi Electric Corp | Thin film deposition equipment |
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