JPS5372576A - Insulator gate type field effect transistor - Google Patents

Insulator gate type field effect transistor

Info

Publication number
JPS5372576A
JPS5372576A JP14778976A JP14778976A JPS5372576A JP S5372576 A JPS5372576 A JP S5372576A JP 14778976 A JP14778976 A JP 14778976A JP 14778976 A JP14778976 A JP 14778976A JP S5372576 A JPS5372576 A JP S5372576A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
gate type
dielectric strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14778976A
Other languages
Japanese (ja)
Other versions
JPS5525514B2 (en
Inventor
Isao Yoshida
Takeaki Okabe
Tatsu Toriyabe
Mineo Katsueda
Masatomo Furuumi
Yukio Shirota
Hideshi Ito
Shikayuki Ochi
Minoru Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14778976A priority Critical patent/JPS5372576A/en
Publication of JPS5372576A publication Critical patent/JPS5372576A/en
Publication of JPS5525514B2 publication Critical patent/JPS5525514B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To prevent the negative feedback loop which occurs at the redoubling time of sloping and thus to prevent the negative resistance phenomenon after breakage of the dielectric strength, by securing such a structure in that the resistivity of the substrate is lowered practically for a MOSFET of a high dielectric strength and the drain's dielectric strength is determined by the junction dielectric strength between the drain substrata.
COPYRIGHT: (C)1978,JPO&Japio
JP14778976A 1976-12-10 1976-12-10 Insulator gate type field effect transistor Granted JPS5372576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14778976A JPS5372576A (en) 1976-12-10 1976-12-10 Insulator gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14778976A JPS5372576A (en) 1976-12-10 1976-12-10 Insulator gate type field effect transistor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58216187A Division JPS59130472A (en) 1983-11-18 1983-11-18 Insulated gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS5372576A true JPS5372576A (en) 1978-06-28
JPS5525514B2 JPS5525514B2 (en) 1980-07-07

Family

ID=15438227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14778976A Granted JPS5372576A (en) 1976-12-10 1976-12-10 Insulator gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5372576A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106165A (en) * 1980-12-24 1982-07-01 Hitachi Ltd Insulating gate type field-effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106165A (en) * 1980-12-24 1982-07-01 Hitachi Ltd Insulating gate type field-effect transistor

Also Published As

Publication number Publication date
JPS5525514B2 (en) 1980-07-07

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