JPS5373A - Vapor growing method for semiconductor single crystal - Google Patents

Vapor growing method for semiconductor single crystal

Info

Publication number
JPS5373A
JPS5373A JP7482376A JP7482376A JPS5373A JP S5373 A JPS5373 A JP S5373A JP 7482376 A JP7482376 A JP 7482376A JP 7482376 A JP7482376 A JP 7482376A JP S5373 A JPS5373 A JP S5373A
Authority
JP
Japan
Prior art keywords
single crystal
semiconductor single
growing method
vapor growing
vapor growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7482376A
Other languages
Japanese (ja)
Inventor
Mitsutoshi Hibino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7482376A priority Critical patent/JPS5373A/en
Publication of JPS5373A publication Critical patent/JPS5373A/en
Pending legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To prevent the self-addition of impurity from the substrate to vapor growth layer and thus to obtain a good-quality crystal by setting the heating temperature form the substrate bottom surface lower than the vapor growth temperature and then by securing a temperature for the vapor growth surface enough to grow a crystal.
COPYRIGHT: (C)1978,JPO&Japio
JP7482376A 1976-06-23 1976-06-23 Vapor growing method for semiconductor single crystal Pending JPS5373A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7482376A JPS5373A (en) 1976-06-23 1976-06-23 Vapor growing method for semiconductor single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7482376A JPS5373A (en) 1976-06-23 1976-06-23 Vapor growing method for semiconductor single crystal

Publications (1)

Publication Number Publication Date
JPS5373A true JPS5373A (en) 1978-01-05

Family

ID=13558408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7482376A Pending JPS5373A (en) 1976-06-23 1976-06-23 Vapor growing method for semiconductor single crystal

Country Status (1)

Country Link
JP (1) JPS5373A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5997005A (en) * 1982-11-02 1984-06-04 メツセルシユミツト−ベルコウ−ブロ−ム・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング Sensor detecting magnetic field strain or measuring parameter which can be drawn out of magnetic field strain

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5997005A (en) * 1982-11-02 1984-06-04 メツセルシユミツト−ベルコウ−ブロ−ム・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング Sensor detecting magnetic field strain or measuring parameter which can be drawn out of magnetic field strain

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