JPS5377472A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5377472A JPS5377472A JP15294876A JP15294876A JPS5377472A JP S5377472 A JPS5377472 A JP S5377472A JP 15294876 A JP15294876 A JP 15294876A JP 15294876 A JP15294876 A JP 15294876A JP S5377472 A JPS5377472 A JP S5377472A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- forming
- emitter
- setting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To obtain a graft base transistor of a good high-frequency characteristic by forming the emitter and base contact forming windows simultaneously and setting the distance according to the pattern dimension precision of a photomask used at this time.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15294876A JPS5377472A (en) | 1976-12-21 | 1976-12-21 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15294876A JPS5377472A (en) | 1976-12-21 | 1976-12-21 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5377472A true JPS5377472A (en) | 1978-07-08 |
Family
ID=15551649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15294876A Pending JPS5377472A (en) | 1976-12-21 | 1976-12-21 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5377472A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56135964A (en) * | 1980-03-28 | 1981-10-23 | Nec Corp | Semiconductor device |
| JPS59149055A (en) * | 1983-02-12 | 1984-08-25 | アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド | Method of producing bipolar planar transistor |
-
1976
- 1976-12-21 JP JP15294876A patent/JPS5377472A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56135964A (en) * | 1980-03-28 | 1981-10-23 | Nec Corp | Semiconductor device |
| JPS59149055A (en) * | 1983-02-12 | 1984-08-25 | アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド | Method of producing bipolar planar transistor |
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