JPS5380182A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5380182A JPS5380182A JP15672476A JP15672476A JPS5380182A JP S5380182 A JPS5380182 A JP S5380182A JP 15672476 A JP15672476 A JP 15672476A JP 15672476 A JP15672476 A JP 15672476A JP S5380182 A JPS5380182 A JP S5380182A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- pad part
- upper layer
- providing
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910018125 Al-Si Inorganic materials 0.000 abstract 1
- 229910018520 Al—Si Inorganic materials 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To reduce greatly the chip size by forming the bonding pad part occupying a large a area in an IC with the Al material and then providing the pad part singly to the upper layer of Al-Si wiring via an insulator film.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15672476A JPS5380182A (en) | 1976-12-25 | 1976-12-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15672476A JPS5380182A (en) | 1976-12-25 | 1976-12-25 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5380182A true JPS5380182A (en) | 1978-07-15 |
Family
ID=15633936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15672476A Pending JPS5380182A (en) | 1976-12-25 | 1976-12-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5380182A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58186967A (en) * | 1982-04-26 | 1983-11-01 | Toshiba Corp | Manufacture of thin film semiconductor device |
| JPH02308539A (en) * | 1989-05-23 | 1990-12-21 | Hitachi Ltd | Construction of electrode of semiconductor device |
-
1976
- 1976-12-25 JP JP15672476A patent/JPS5380182A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58186967A (en) * | 1982-04-26 | 1983-11-01 | Toshiba Corp | Manufacture of thin film semiconductor device |
| JPH02308539A (en) * | 1989-05-23 | 1990-12-21 | Hitachi Ltd | Construction of electrode of semiconductor device |
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