JPS5283071A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5283071A
JPS5283071A JP15929475A JP15929475A JPS5283071A JP S5283071 A JPS5283071 A JP S5283071A JP 15929475 A JP15929475 A JP 15929475A JP 15929475 A JP15929475 A JP 15929475A JP S5283071 A JPS5283071 A JP S5283071A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
flattening
impurity
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15929475A
Other languages
Japanese (ja)
Other versions
JPS5755303B2 (en
Inventor
Shigero Kuninobu
Takeshi Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15929475A priority Critical patent/JPS5283071A/en
Priority to US05/754,261 priority patent/US4085499A/en
Publication of JPS5283071A publication Critical patent/JPS5283071A/en
Publication of JPS5755303B2 publication Critical patent/JPS5755303B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To prevent disconnection through flattening of surface and improve patterning accuracy by forming a poly Si layer added with an impurity on source and drain regions, as a conductive layer.
COPYRIGHT: (C)1977,JPO&Japio
JP15929475A 1975-12-29 1975-12-29 Production of semiconductor device Granted JPS5283071A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP15929475A JPS5283071A (en) 1975-12-29 1975-12-29 Production of semiconductor device
US05/754,261 US4085499A (en) 1975-12-29 1976-12-27 Method of making a MOS-type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15929475A JPS5283071A (en) 1975-12-29 1975-12-29 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5283071A true JPS5283071A (en) 1977-07-11
JPS5755303B2 JPS5755303B2 (en) 1982-11-24

Family

ID=15690638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15929475A Granted JPS5283071A (en) 1975-12-29 1975-12-29 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5283071A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54114479U (en) * 1978-01-31 1979-08-11
JPS5511352A (en) * 1978-07-12 1980-01-26 Chiyou Lsi Gijutsu Kenkyu Kumiai Insulated gate type field effect transistor and manufacture thereof
JPS58118158A (en) * 1981-12-30 1983-07-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming field effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54114479U (en) * 1978-01-31 1979-08-11
JPS5511352A (en) * 1978-07-12 1980-01-26 Chiyou Lsi Gijutsu Kenkyu Kumiai Insulated gate type field effect transistor and manufacture thereof
JPS58118158A (en) * 1981-12-30 1983-07-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming field effect transistor

Also Published As

Publication number Publication date
JPS5755303B2 (en) 1982-11-24

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