JPS5380A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5380A
JPS5380A JP7481876A JP7481876A JPS5380A JP S5380 A JPS5380 A JP S5380A JP 7481876 A JP7481876 A JP 7481876A JP 7481876 A JP7481876 A JP 7481876A JP S5380 A JPS5380 A JP S5380A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
formation
protective fet
increaing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7481876A
Other languages
English (en)
Inventor
Yoshihiro Osada
Akihiro Shindo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7481876A priority Critical patent/JPS5380A/ja
Publication of JPS5380A publication Critical patent/JPS5380A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP7481876A 1976-06-23 1976-06-23 Manufacture of semiconductor device Pending JPS5380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7481876A JPS5380A (en) 1976-06-23 1976-06-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7481876A JPS5380A (en) 1976-06-23 1976-06-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5380A true JPS5380A (en) 1978-01-05

Family

ID=13558265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7481876A Pending JPS5380A (en) 1976-06-23 1976-06-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5380A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60128653A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 半導体集積回路装置
JPH07505004A (ja) * 1993-03-31 1995-06-01 サムソン　エレクトロニクス　カンパニー　リミテッド モニタの電源節約装置及び方法
US5475245A (en) * 1992-03-23 1995-12-12 Rohm Co., Ltd. Field-effect voltage regulator diode
JP2021156865A (ja) * 2020-03-26 2021-10-07 株式会社神戸製鋼所 熱交換器の解体方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60128653A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 半導体集積回路装置
US5475245A (en) * 1992-03-23 1995-12-12 Rohm Co., Ltd. Field-effect voltage regulator diode
JPH07505004A (ja) * 1993-03-31 1995-06-01 サムソン　エレクトロニクス　カンパニー　リミテッド モニタの電源節約装置及び方法
JP2021156865A (ja) * 2020-03-26 2021-10-07 株式会社神戸製鋼所 熱交換器の解体方法

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