JPS5387985A - Gaseous phase epitaxial growth method for compound semiconductor crystal - Google Patents

Gaseous phase epitaxial growth method for compound semiconductor crystal

Info

Publication number
JPS5387985A
JPS5387985A JP339277A JP339277A JPS5387985A JP S5387985 A JPS5387985 A JP S5387985A JP 339277 A JP339277 A JP 339277A JP 339277 A JP339277 A JP 339277A JP S5387985 A JPS5387985 A JP S5387985A
Authority
JP
Japan
Prior art keywords
compound semiconductor
epitaxial growth
semiconductor crystal
growth method
gaseous phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP339277A
Other languages
Japanese (ja)
Inventor
Hisao Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP339277A priority Critical patent/JPS5387985A/en
Publication of JPS5387985A publication Critical patent/JPS5387985A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To form a film of uniform thickness by using crystals of the same quality as raw materials for substrate and a substrate holder with larger area than that of the substrate so that growing thickness is made uniform on the central and peripheral parts of the substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP339277A 1977-01-13 1977-01-13 Gaseous phase epitaxial growth method for compound semiconductor crystal Pending JPS5387985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP339277A JPS5387985A (en) 1977-01-13 1977-01-13 Gaseous phase epitaxial growth method for compound semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP339277A JPS5387985A (en) 1977-01-13 1977-01-13 Gaseous phase epitaxial growth method for compound semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS5387985A true JPS5387985A (en) 1978-08-02

Family

ID=11556081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP339277A Pending JPS5387985A (en) 1977-01-13 1977-01-13 Gaseous phase epitaxial growth method for compound semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS5387985A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5515351A (en) * 1978-07-19 1980-02-02 Kayaba Industry Co Ltd Front fork mounting apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5515351A (en) * 1978-07-19 1980-02-02 Kayaba Industry Co Ltd Front fork mounting apparatus

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