JPS5393737A - Memory unit - Google Patents
Memory unitInfo
- Publication number
- JPS5393737A JPS5393737A JP588778A JP588778A JPS5393737A JP S5393737 A JPS5393737 A JP S5393737A JP 588778 A JP588778 A JP 588778A JP 588778 A JP588778 A JP 588778A JP S5393737 A JPS5393737 A JP S5393737A
- Authority
- JP
- Japan
- Prior art keywords
- memory unit
- memory
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76180677A | 1977-01-24 | 1977-01-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5393737A true JPS5393737A (en) | 1978-08-17 |
Family
ID=25063317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP588778A Pending JPS5393737A (en) | 1977-01-24 | 1978-01-24 | Memory unit |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5393737A (fr) |
| BE (1) | BE863126A (fr) |
| DE (1) | DE2802761A1 (fr) |
| FR (1) | FR2378331A1 (fr) |
| IT (1) | IT1106983B (fr) |
| NL (1) | NL7800798A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04232687A (ja) * | 1990-11-06 | 1992-08-20 | Korea Electron Telecommun | 低雑音特性をもつダイナミックram |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS607388B2 (ja) * | 1978-09-08 | 1985-02-23 | 富士通株式会社 | 半導体記憶装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3876992A (en) * | 1972-11-01 | 1975-04-08 | Ibm | Bipolar transistor memory with capacitive storage |
| US3979734A (en) * | 1975-06-16 | 1976-09-07 | International Business Machines Corporation | Multiple element charge storage memory cell |
-
1978
- 1978-01-20 IT IT67112/78A patent/IT1106983B/it active
- 1978-01-20 BE BE184487A patent/BE863126A/fr unknown
- 1978-01-23 DE DE19782802761 patent/DE2802761A1/de active Pending
- 1978-01-23 FR FR7801826A patent/FR2378331A1/fr not_active Withdrawn
- 1978-01-23 NL NL7800798A patent/NL7800798A/xx not_active Application Discontinuation
- 1978-01-24 JP JP588778A patent/JPS5393737A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04232687A (ja) * | 1990-11-06 | 1992-08-20 | Korea Electron Telecommun | 低雑音特性をもつダイナミックram |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2802761A1 (de) | 1978-07-27 |
| IT1106983B (it) | 1985-11-18 |
| FR2378331A1 (fr) | 1978-08-18 |
| NL7800798A (nl) | 1978-07-26 |
| BE863126A (fr) | 1978-05-16 |
| IT7867112A0 (it) | 1978-01-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB2034942B (en) | Errorcorrecting memory | |
| JPS53148928A (en) | Memory system | |
| GB2009239B (en) | Electricita storage | |
| JPS5399735A (en) | Optical memory | |
| JPS53146541A (en) | Opennended microprogram memory | |
| GB2005880A (en) | Memory expansion | |
| JPS5412644A (en) | Memory controller | |
| JPS5472922A (en) | Memory | |
| JPS53102054A (en) | Horogram memory device | |
| JPS5667888A (en) | Imageehandling memory unit | |
| GB2006562B (en) | Memory circuit | |
| JPS5444259A (en) | Storage | |
| GB2010037B (en) | Memory cell | |
| GB2002724B (en) | Storage arrangement | |
| JPS5439527A (en) | Memory controller | |
| GB2001801B (en) | Storage elements | |
| JPS53104142A (en) | Analog memory | |
| JPS55127686A (en) | Time memory unit | |
| JPS5469920A (en) | Electronic memory | |
| JPS5418245A (en) | Diagram forming unit | |
| JPS5474334A (en) | Text memory | |
| JPS5470805A (en) | Optical memory | |
| JPS5394139A (en) | Memory | |
| JPS5494843A (en) | Bipolar memory | |
| DE2862339D1 (en) | Radiophotographic unit |