JPS54100596A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS54100596A JPS54100596A JP758278A JP758278A JPS54100596A JP S54100596 A JPS54100596 A JP S54100596A JP 758278 A JP758278 A JP 758278A JP 758278 A JP758278 A JP 758278A JP S54100596 A JPS54100596 A JP S54100596A
- Authority
- JP
- Japan
- Prior art keywords
- halogenous
- fluorine
- etching
- substitution product
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title abstract 5
- 238000000034 method Methods 0.000 title 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 4
- 229910052731 fluorine Inorganic materials 0.000 abstract 4
- 239000011737 fluorine Substances 0.000 abstract 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract 4
- 238000006467 substitution reaction Methods 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 3
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 abstract 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 abstract 2
- 239000005977 Ethylene Substances 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 230000007423 decrease Effects 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
PURPOSE: To improve crystal product quality by turning into plasma and using as etching gas a mixture, with argon added, of one or more than two kinds of halogenous substitution product of methane, ethane and ethylene containing at least fluorine.
CONSTITUTION: Of halogenous substitution product of methane containing at least fluorine, halogenous substitution product of ethane containing at least fluorine and halogenous substitution product of ethylene containing at least fluorine, a mixture of one or more than two kinds with argon added is turned into plasma. The use of this gas plasma almost eliminates side etching in the thickness direction of crystal and decreases to less than 2μ the etching dimension difference from the master pattern, assuring uniform and quick etching of crystal with no convex part.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP758278A JPS54100596A (en) | 1978-01-26 | 1978-01-26 | Etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP758278A JPS54100596A (en) | 1978-01-26 | 1978-01-26 | Etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54100596A true JPS54100596A (en) | 1979-08-08 |
Family
ID=11669795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP758278A Pending JPS54100596A (en) | 1978-01-26 | 1978-01-26 | Etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54100596A (en) |
-
1978
- 1978-01-26 JP JP758278A patent/JPS54100596A/en active Pending
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