JPS54101272A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS54101272A
JPS54101272A JP723578A JP723578A JPS54101272A JP S54101272 A JPS54101272 A JP S54101272A JP 723578 A JP723578 A JP 723578A JP 723578 A JP723578 A JP 723578A JP S54101272 A JPS54101272 A JP S54101272A
Authority
JP
Japan
Prior art keywords
film
silicon oxide
oxide film
electrode hole
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP723578A
Other languages
Japanese (ja)
Other versions
JPS6054778B2 (en
Inventor
Takehisa Nishizawa
Mitsusuke Tanaka
Isao Shimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP53007235A priority Critical patent/JPS6054778B2/en
Publication of JPS54101272A publication Critical patent/JPS54101272A/en
Publication of JPS6054778B2 publication Critical patent/JPS6054778B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE: To prevent open wire by making the passivation film around the outlet of electrode hole in obtuse angle, in the manufacture of semiconductor device providing the silicon oxide film and phosphorus glass film with passivation film.
CONSTITUTION: After forming the electrode hole on the passivation film consisting of the first silicon oxide film 22, phosphorus glass film 23 and second silicon oxide film 24 with photo-etching, electrodes are formed by removing the second silicon oxide film 24. As a result, since the metal film 26 is produced with the passivation film around the outlet of the electrode hole 25 with a obtuse angle, no open wire can be made.
COPYRIGHT: (C)1979,JPO&Japio
JP53007235A 1978-01-27 1978-01-27 Manufacturing method of semiconductor device Expired JPS6054778B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53007235A JPS6054778B2 (en) 1978-01-27 1978-01-27 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53007235A JPS6054778B2 (en) 1978-01-27 1978-01-27 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS54101272A true JPS54101272A (en) 1979-08-09
JPS6054778B2 JPS6054778B2 (en) 1985-12-02

Family

ID=11660321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53007235A Expired JPS6054778B2 (en) 1978-01-27 1978-01-27 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6054778B2 (en)

Also Published As

Publication number Publication date
JPS6054778B2 (en) 1985-12-02

Similar Documents

Publication Publication Date Title
JPS51147273A (en) Manufacturing process of semiconductor device
JPS53147481A (en) Semiconductor device and production of the same
JPS5496366A (en) Semiconductor device
JPS5230392A (en) Electrode and it's manufacturing process
JPS5380183A (en) Semiconductor device
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS5432269A (en) Manufacture for semiconductor device
JPS5422171A (en) Manufacture of semiconductor device
JPS5227362A (en) Formation method of passivation film
JPS5268366A (en) Solder vamp formation onto semiconductor substrate
JPS5362471A (en) Semiconductor device
JPS5441673A (en) Semiconductor device and its manufacture
JPS51120668A (en) Semiconductor device manufacturing method
JPS52144288A (en) Preparation of electrode in semiconductor device
JPS52143767A (en) Production of semiconductor device
JPS51126762A (en) Integrated circuit manufacturing process
JPS5253674A (en) Semiconductor device
JPS5377168A (en) Production of semiconductor device
JPS5293276A (en) Manufacture for semiconductor device
JPS5272186A (en) Production of mis type semiconductor device
JPS5335488A (en) Production of photoconductive element
JPS5227382A (en) Manufacturing process of semiconductor device
JPS52123872A (en) Semiconductor device and its production
JPS52104869A (en) Manufacture for semiconductor device
JPS55115337A (en) Manufacture of semiconductor device