JPS54122986A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS54122986A
JPS54122986A JP3012878A JP3012878A JPS54122986A JP S54122986 A JPS54122986 A JP S54122986A JP 3012878 A JP3012878 A JP 3012878A JP 3012878 A JP3012878 A JP 3012878A JP S54122986 A JPS54122986 A JP S54122986A
Authority
JP
Japan
Prior art keywords
laser
drive
wave length
mirror
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3012878A
Other languages
Japanese (ja)
Inventor
Keiichi Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3012878A priority Critical patent/JPS54122986A/en
Publication of JPS54122986A publication Critical patent/JPS54122986A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Communication System (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make suitable the device for optical communication through allowance, by applying the output of a plurality of semiconductor lasers different in oscillation wave length to the wave synthesizer having wave length selective mirror, and selecting the drive laser through the monitor of the output of each laser. CONSTITUTION:The output of the lasers 11, 11' mounting the semiconductor lasers different in oscillated wave length is fed to the wave synthesizer 15 with the respective optical fiber 12, 12'. Further, when one laser 11 is at long wave length side and another laser 11' is at short wave length side, the signal from the laser 11 is coupled to the transmission line 16 via the lens 13, and the reflection area of the mirror 14, and that from the laser 11' is via the transmission area of the mirror 14. Further, a part of the outputs of the lasers 11, 11' is monitored to drive the drive circuits 17, 17', and the laser operation reference signal is fed to the selection circuit 18 to drive the laser of specified system. In this case, when the circuit 18 is replaced with the distributor 19 operated with external reference, the selective drive externally can be possible.
JP3012878A 1978-03-16 1978-03-16 Semiconductor laser device Pending JPS54122986A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3012878A JPS54122986A (en) 1978-03-16 1978-03-16 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3012878A JPS54122986A (en) 1978-03-16 1978-03-16 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS54122986A true JPS54122986A (en) 1979-09-22

Family

ID=12295130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3012878A Pending JPS54122986A (en) 1978-03-16 1978-03-16 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS54122986A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5768098A (en) * 1980-10-16 1982-04-26 Mitsubishi Electric Corp Semiconductor laser synthesizer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5768098A (en) * 1980-10-16 1982-04-26 Mitsubishi Electric Corp Semiconductor laser synthesizer

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