JPS54129882A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54129882A JPS54129882A JP2895278A JP2895278A JPS54129882A JP S54129882 A JPS54129882 A JP S54129882A JP 2895278 A JP2895278 A JP 2895278A JP 2895278 A JP2895278 A JP 2895278A JP S54129882 A JPS54129882 A JP S54129882A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicide layer
- scribing
- substrate
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910021332 silicide Inorganic materials 0.000 abstract 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 5
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000002950 deficient Effects 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000010813 municipal solid waste Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
Landscapes
- Dicing (AREA)
Abstract
PURPOSE: To avoid the scaling to the silicide layer even with laser scribing, by taking the construction that the silicide layer such as Pt provided on the Si substrate is covered with the SiO2 film for the constitution of scribing region.
CONSTITUTION: The part on the scribing region 5 is removed by coating the SiO2 film 2 on the Si substrate 1 and the part on the substrate 1 exposed is formed by the Pt silicide layer 4. Next, new SiO2 film 3 is coated on the entire surface, and the scribing groove 6 is made at the region 5 by using laser while providing the film 3. Thus, the trash of Si caused in scribing is not caused on the silicide layer 4 and non-defective element rate can not be decreased. Further, the silicide layer is not limited to Pt and it can be Co, Mo, Cr, Pd, Ni, Ti, Ta, W, and the protective film can be Si3N4 or organic film.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2895278A JPS54129882A (en) | 1978-03-13 | 1978-03-13 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2895278A JPS54129882A (en) | 1978-03-13 | 1978-03-13 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54129882A true JPS54129882A (en) | 1979-10-08 |
Family
ID=12262738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2895278A Pending JPS54129882A (en) | 1978-03-13 | 1978-03-13 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54129882A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6228766B1 (en) | 1997-01-23 | 2001-05-08 | Nec Corporation | Process for fabricating semiconductor device without separation between silicide layer and insulating layer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4933907A (en) * | 1972-07-28 | 1974-03-28 |
-
1978
- 1978-03-13 JP JP2895278A patent/JPS54129882A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4933907A (en) * | 1972-07-28 | 1974-03-28 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6228766B1 (en) | 1997-01-23 | 2001-05-08 | Nec Corporation | Process for fabricating semiconductor device without separation between silicide layer and insulating layer |
| KR100294131B1 (en) * | 1997-01-23 | 2001-07-12 | 가네꼬 히사시 | Process for fabricating semiconductor device without separation between silicide layer and insulating layer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5669837A (en) | Manufacture of semiconductor device | |
| JPS54129882A (en) | Semiconductor device | |
| JPS5658269A (en) | Mos type semiconductor device | |
| JPS5297688A (en) | Semiconductor device | |
| JPS5421265A (en) | Forming method of semiconductor oxide film | |
| JPS5461478A (en) | Chromium plate | |
| JPS52131751A (en) | Measuring method for thickness of transparent film | |
| JPS5498596A (en) | Picture display unit and its manufacture | |
| JPS51136288A (en) | Photo etching using non-crystalline carchogenide glass thin film | |
| JPS53108771A (en) | Semiconductor device | |
| JPS5391684A (en) | Semiconductor laser | |
| JPS54133088A (en) | Semiconductor device | |
| JPS5381069A (en) | Production of susceptor in cvd device | |
| JPS5436182A (en) | Manufacture for semiconductor device | |
| JPS55149892A (en) | Gas flow counter | |
| JPS5421272A (en) | Metal photo mask | |
| JPS5245270A (en) | Semiconductor device | |
| JPS534469A (en) | Semiconductor device | |
| JPS5564350A (en) | Radioactive-ray receiving face | |
| JPS53142870A (en) | Manufacture for semiconductor device | |
| JPS5338980A (en) | Manufacture of semiconductor device | |
| JPS53105973A (en) | Manufacture of semiconductor device | |
| JPS5678158A (en) | Manufacture of alloy junction type semiconductor device | |
| JPS5315775A (en) | Production of mos type semiconductor device | |
| JPS543470A (en) | Etching method |