JPS54149593A - Solar cell - Google Patents

Solar cell

Info

Publication number
JPS54149593A
JPS54149593A JP5844378A JP5844378A JPS54149593A JP S54149593 A JPS54149593 A JP S54149593A JP 5844378 A JP5844378 A JP 5844378A JP 5844378 A JP5844378 A JP 5844378A JP S54149593 A JPS54149593 A JP S54149593A
Authority
JP
Japan
Prior art keywords
sio
pattern
photoetching
solar cell
type layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5844378A
Other languages
Japanese (ja)
Inventor
Tsutomu Otake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP5844378A priority Critical patent/JPS54149593A/en
Publication of JPS54149593A publication Critical patent/JPS54149593A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To lessen the manufacturing cost of a solar cell by providing characters, numerals, symbols, patterns, etc., within the limits of needed processes.
CONSTITUTION: At the time when P+-type layer 102 is formed selectively in N- type silicon substrate 101 by photoetching, the mask of a SiO2 film is made into a desirable pattern. Therefore, P+-type layer 102 is of the desirable pattern. When the pattern of this SiO2 is made by photoetching, silicon substrte 102 is slightly etched and an uneven pattern can be obtained. In addition, since the growing speed of SiO2 at an impurity-diffused part differs from that at a undiffused part in an oxidation process, the unevenness of the SiO2 film surface becomes more remarkable. For the purpose, using a fine lattice pattern forms uneven diffraction lattice on the surface of SiO2 105 on the photo detection part, and it can be seen coloring when light strikes.
COPYRIGHT: (C)1979,JPO&Japio
JP5844378A 1978-05-17 1978-05-17 Solar cell Pending JPS54149593A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5844378A JPS54149593A (en) 1978-05-17 1978-05-17 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5844378A JPS54149593A (en) 1978-05-17 1978-05-17 Solar cell

Publications (1)

Publication Number Publication Date
JPS54149593A true JPS54149593A (en) 1979-11-22

Family

ID=13084532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5844378A Pending JPS54149593A (en) 1978-05-17 1978-05-17 Solar cell

Country Status (1)

Country Link
JP (1) JPS54149593A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119874A (en) * 1982-12-27 1984-07-11 Hoya Corp solar cells

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119874A (en) * 1982-12-27 1984-07-11 Hoya Corp solar cells

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