JPS5420672A - Production of semiconductor devices - Google Patents

Production of semiconductor devices

Info

Publication number
JPS5420672A
JPS5420672A JP8522877A JP8522877A JPS5420672A JP S5420672 A JPS5420672 A JP S5420672A JP 8522877 A JP8522877 A JP 8522877A JP 8522877 A JP8522877 A JP 8522877A JP S5420672 A JPS5420672 A JP S5420672A
Authority
JP
Japan
Prior art keywords
production
semiconductor devices
vapor
oxide
subjecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8522877A
Other languages
Japanese (ja)
Other versions
JPS5436456B2 (en
Inventor
Hiromitsu Takagi
Kota Kano
Iwao Teramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8522877A priority Critical patent/JPS5420672A/en
Priority to DE2830035A priority patent/DE2830035C2/en
Priority to US05/923,689 priority patent/US4194927A/en
Priority to FR7820897A priority patent/FR2397718A1/en
Priority to CA307,437A priority patent/CA1104267A/en
Priority to GB7829825A priority patent/GB2001048B/en
Publication of JPS5420672A publication Critical patent/JPS5420672A/en
Publication of JPS5436456B2 publication Critical patent/JPS5436456B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To prevent the change in the composition of oxide film and the reduction in film thickness by subjecting the substance containing oxide of As to heat treatment in vapor containing As2O3 vapor.
COPYRIGHT: (C)1979,JPO&Japio
JP8522877A 1977-07-15 1977-07-15 Production of semiconductor devices Granted JPS5420672A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP8522877A JPS5420672A (en) 1977-07-15 1977-07-15 Production of semiconductor devices
DE2830035A DE2830035C2 (en) 1977-07-15 1978-07-07 Method of preventing arsenic depletion in oxide films containing arsenic on a semiconductor device
US05/923,689 US4194927A (en) 1977-07-15 1978-07-11 Selective thermal oxidation of As-containing compound semiconductor regions
FR7820897A FR2397718A1 (en) 1977-07-15 1978-07-12 PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES
CA307,437A CA1104267A (en) 1977-07-15 1978-07-14 Method of making semiconductor devices
GB7829825A GB2001048B (en) 1977-07-15 1978-07-14 Method of making semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8522877A JPS5420672A (en) 1977-07-15 1977-07-15 Production of semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5420672A true JPS5420672A (en) 1979-02-16
JPS5436456B2 JPS5436456B2 (en) 1979-11-09

Family

ID=13852699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8522877A Granted JPS5420672A (en) 1977-07-15 1977-07-15 Production of semiconductor devices

Country Status (1)

Country Link
JP (1) JPS5420672A (en)

Also Published As

Publication number Publication date
JPS5436456B2 (en) 1979-11-09

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