JPS5423391A - Gallium-arsenic semiconductor element - Google Patents

Gallium-arsenic semiconductor element

Info

Publication number
JPS5423391A
JPS5423391A JP8851777A JP8851777A JPS5423391A JP S5423391 A JPS5423391 A JP S5423391A JP 8851777 A JP8851777 A JP 8851777A JP 8851777 A JP8851777 A JP 8851777A JP S5423391 A JPS5423391 A JP S5423391A
Authority
JP
Japan
Prior art keywords
gallium
semiconductor element
arsenic semiconductor
type layer
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8851777A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8851777A priority Critical patent/JPS5423391A/en
Publication of JPS5423391A publication Critical patent/JPS5423391A/en
Pending legal-status Critical Current

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  • Led Devices (AREA)

Abstract

PURPOSE: To obtain a luminous element which is large in luminescence efficiency and fast in response speed, by vaporphase-epitaxial-growing a N-type layer obtained by doping Si on a GaAs substrate and by starting growth on it from a lower temperature than an inversion temperature using a solution with Si for the liquid-crystal epitaxial growth of a P-type layer.
COPYRIGHT: (C)1979,JPO&Japio
JP8851777A 1977-07-22 1977-07-22 Gallium-arsenic semiconductor element Pending JPS5423391A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8851777A JPS5423391A (en) 1977-07-22 1977-07-22 Gallium-arsenic semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8851777A JPS5423391A (en) 1977-07-22 1977-07-22 Gallium-arsenic semiconductor element

Publications (1)

Publication Number Publication Date
JPS5423391A true JPS5423391A (en) 1979-02-21

Family

ID=13945011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8851777A Pending JPS5423391A (en) 1977-07-22 1977-07-22 Gallium-arsenic semiconductor element

Country Status (1)

Country Link
JP (1) JPS5423391A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4902356A (en) * 1988-01-21 1990-02-20 Mitsubishi Monsanto Chemical Company Epitaxial substrate for high-intensity led, and method of manufacturing same
US4921817A (en) * 1987-07-09 1990-05-01 Mitsubishi Monsanto Chemical Co. Substrate for high-intensity led, and method of epitaxially growing same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136586A (en) * 1974-09-25 1976-03-27 Furukawa Electric Co Ltd
JPS5286059A (en) * 1976-01-13 1977-07-16 Nippon Telegr & Teleph Corp <Ntt> Process for production and apparatus used for process of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136586A (en) * 1974-09-25 1976-03-27 Furukawa Electric Co Ltd
JPS5286059A (en) * 1976-01-13 1977-07-16 Nippon Telegr & Teleph Corp <Ntt> Process for production and apparatus used for process of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4921817A (en) * 1987-07-09 1990-05-01 Mitsubishi Monsanto Chemical Co. Substrate for high-intensity led, and method of epitaxially growing same
US4902356A (en) * 1988-01-21 1990-02-20 Mitsubishi Monsanto Chemical Company Epitaxial substrate for high-intensity led, and method of manufacturing same

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