JPS5626480A - Semiconductor light emitting device and manufacturing process thereof - Google Patents
Semiconductor light emitting device and manufacturing process thereofInfo
- Publication number
- JPS5626480A JPS5626480A JP10135079A JP10135079A JPS5626480A JP S5626480 A JPS5626480 A JP S5626480A JP 10135079 A JP10135079 A JP 10135079A JP 10135079 A JP10135079 A JP 10135079A JP S5626480 A JPS5626480 A JP S5626480A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- gaas
- light emitting
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain a high-efficiency diode at a high recovery rate, by providing surface of a P type III-V group semiconductor substrate with a P type III-V group chemical compound layer doped of Si and P type or N type impurities, and also with an N type III-V group chemical compound layer doped of Si and P type or N type impurities in the Periodic Table. CONSTITUTION:A solution, which is doped of Ga, GaAs, Si and P type impurity Ge, is made to contact surface of an N<+> type GaAs substrate 1 at 950 deg.C and gradually cooled at a cooling speed of 1 deg.C per minute to allow formations of an N type GaAs layer 9 during the cooling process 950 deg.C-930 deg.C and a P type GaAs layer 10 in the cooling process from 930 deg.C to lower temperature. By doping P type Ge in this manner to raise the temperature at which N type is reversed to P type in case of not doping, a thick layer 10 is obtained. And then, by covering the layer 10 side with a P type side ohmic electrode 5 and the substrate 1 with an N type side mask ohmic electrode 4, a semiconductor light emitting device is prepared.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10135079A JPS5626480A (en) | 1979-08-10 | 1979-08-10 | Semiconductor light emitting device and manufacturing process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10135079A JPS5626480A (en) | 1979-08-10 | 1979-08-10 | Semiconductor light emitting device and manufacturing process thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5626480A true JPS5626480A (en) | 1981-03-14 |
Family
ID=14298379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10135079A Pending JPS5626480A (en) | 1979-08-10 | 1979-08-10 | Semiconductor light emitting device and manufacturing process thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5626480A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5032539A (en) * | 1988-07-08 | 1991-07-16 | Kabushiki Kaisha Toshiba | Method of manufacturing green light emitting diode |
| WO2006090841A1 (en) * | 2005-02-25 | 2006-08-31 | Dowa Electronics Materials Co., Ltd. | AlGaAs LIGHT EMITTING DIODE HAVING DOUBLE HETERO JUNCTION AND METHOD FOR MANUFACTURING SAME |
-
1979
- 1979-08-10 JP JP10135079A patent/JPS5626480A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5032539A (en) * | 1988-07-08 | 1991-07-16 | Kabushiki Kaisha Toshiba | Method of manufacturing green light emitting diode |
| WO2006090841A1 (en) * | 2005-02-25 | 2006-08-31 | Dowa Electronics Materials Co., Ltd. | AlGaAs LIGHT EMITTING DIODE HAVING DOUBLE HETERO JUNCTION AND METHOD FOR MANUFACTURING SAME |
| JP5268356B2 (en) * | 2005-02-25 | 2013-08-21 | Ｄｏｗａエレクトロニクス株式会社 | AlGaAs light emitting diode having double heterojunction and method for manufacturing the same |
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