JPS5428571A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5428571A
JPS5428571A JP9417977A JP9417977A JPS5428571A JP S5428571 A JPS5428571 A JP S5428571A JP 9417977 A JP9417977 A JP 9417977A JP 9417977 A JP9417977 A JP 9417977A JP S5428571 A JPS5428571 A JP S5428571A
Authority
JP
Japan
Prior art keywords
semiconductor device
preventing
caused
psg
intrusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9417977A
Other languages
Japanese (ja)
Other versions
JPS6160579B2 (en
Inventor
Susumu Murakami
Yoshikazu Hosokawa
Tatsuya Kamei
Takuzo Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9417977A priority Critical patent/JPS5428571A/en
Publication of JPS5428571A publication Critical patent/JPS5428571A/en
Publication of JPS6160579B2 publication Critical patent/JPS6160579B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To avoid the characteristics deterioration of the semiconductor device, by forming SiO2, PSG and Si3N4 in sequence on the substrate surface, preventing the damage of the metal wiring caused by the electron beam or the impairment caused by the spatter method when the protective film is formed and also preventing the intrusion of Na+ ion.
COPYRIGHT: (C)1979,JPO&Japio
JP9417977A 1977-08-08 1977-08-08 Semiconductor device Granted JPS5428571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9417977A JPS5428571A (en) 1977-08-08 1977-08-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9417977A JPS5428571A (en) 1977-08-08 1977-08-08 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5428571A true JPS5428571A (en) 1979-03-03
JPS6160579B2 JPS6160579B2 (en) 1986-12-22

Family

ID=14103100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9417977A Granted JPS5428571A (en) 1977-08-08 1977-08-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5428571A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61226930A (en) * 1985-03-30 1986-10-08 Sony Corp Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50549A (en) * 1973-05-10 1975-01-07
JPS5252379A (en) * 1976-07-29 1977-04-27 Sony Corp Semiconductor device
JPS5289468A (en) * 1976-01-21 1977-07-27 Hitachi Ltd Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50549A (en) * 1973-05-10 1975-01-07
JPS5289468A (en) * 1976-01-21 1977-07-27 Hitachi Ltd Semiconductor device
JPS5252379A (en) * 1976-07-29 1977-04-27 Sony Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61226930A (en) * 1985-03-30 1986-10-08 Sony Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6160579B2 (en) 1986-12-22

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