JPS5387672A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5387672A
JPS5387672A JP261777A JP261777A JPS5387672A JP S5387672 A JPS5387672 A JP S5387672A JP 261777 A JP261777 A JP 261777A JP 261777 A JP261777 A JP 261777A JP S5387672 A JPS5387672 A JP S5387672A
Authority
JP
Japan
Prior art keywords
semiconductor device
characteritics
symmetrically
junction
reducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP261777A
Other languages
Japanese (ja)
Inventor
Masahiko Nakamae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP261777A priority Critical patent/JPS5387672A/en
Publication of JPS5387672A publication Critical patent/JPS5387672A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To improve the characteritics of a bipolar type device by reducing the impurity concentration distribution in the thickness direction within the collector layer of the device non-symmetrically up to the surface from the maximal value near the junction.
COPYRIGHT: (C)1978,JPO&Japio
JP261777A 1977-01-12 1977-01-12 Semiconductor device Pending JPS5387672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP261777A JPS5387672A (en) 1977-01-12 1977-01-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP261777A JPS5387672A (en) 1977-01-12 1977-01-12 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5387672A true JPS5387672A (en) 1978-08-02

Family

ID=11534356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP261777A Pending JPS5387672A (en) 1977-01-12 1977-01-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5387672A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0032022A1 (en) * 1979-12-21 1981-07-15 Fujitsu Limited A method of fabricating a semiconductor integrated circuit device
JPS57100769A (en) * 1980-10-27 1982-06-23 Texas Instruments Inc Oxide isolation type schottky integrated logic circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0032022A1 (en) * 1979-12-21 1981-07-15 Fujitsu Limited A method of fabricating a semiconductor integrated circuit device
US4642883A (en) * 1979-12-21 1987-02-17 Fujitsu Limited Semiconductor bipolar integrated circuit device and method for fabrication thereof
JPS57100769A (en) * 1980-10-27 1982-06-23 Texas Instruments Inc Oxide isolation type schottky integrated logic circuit

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