JPS5435178A - Ultrafine particle depositing apparatus - Google Patents
Ultrafine particle depositing apparatusInfo
- Publication number
- JPS5435178A JPS5435178A JP10131877A JP10131877A JPS5435178A JP S5435178 A JPS5435178 A JP S5435178A JP 10131877 A JP10131877 A JP 10131877A JP 10131877 A JP10131877 A JP 10131877A JP S5435178 A JPS5435178 A JP S5435178A
- Authority
- JP
- Japan
- Prior art keywords
- ultrafine particle
- depositing apparatus
- particle depositing
- substrate
- dividing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To provide an apparatus which makes possible deposition of alloy or high melting material as well, by dividing a vacuum vessel with a dividing plate having a hole into two chambers, and by maintaining a sputtering chamber contg. evaporating source material at a gas press. lower than that of a substrate chamber contg. a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10131877A JPS5435178A (en) | 1977-08-23 | 1977-08-23 | Ultrafine particle depositing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10131877A JPS5435178A (en) | 1977-08-23 | 1977-08-23 | Ultrafine particle depositing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5435178A true JPS5435178A (en) | 1979-03-15 |
| JPS5711953B2 JPS5711953B2 (en) | 1982-03-08 |
Family
ID=14297453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10131877A Granted JPS5435178A (en) | 1977-08-23 | 1977-08-23 | Ultrafine particle depositing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5435178A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2551460A1 (en) * | 1983-09-02 | 1985-03-08 | Leybold Heraeus Gmbh & Co Kg | METHOD AND DEVICE FOR REACTIVE SPRAY DEPOSITION OF METAL COMPOUNDS AND SEMICONDUCTORS |
| JPS6043481A (en) * | 1983-08-19 | 1985-03-08 | 旭硝子株式会社 | Sputtering method and device |
| JPS63303068A (en) * | 1987-06-03 | 1988-12-09 | Daido Steel Co Ltd | Substrate heating device |
| KR100392811B1 (en) * | 2001-08-14 | 2003-07-28 | 주식회사 삼원진공 | Multiple vacuum depositor of double chamber type |
| EP1486583A4 (en) * | 2002-02-26 | 2008-03-26 | Japan Science & Tech Agency | METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR OR INSULATING / METALLIC LAMINAR COMPOSITE BEAM |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5026778A (en) * | 1973-03-27 | 1975-03-19 |
-
1977
- 1977-08-23 JP JP10131877A patent/JPS5435178A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5026778A (en) * | 1973-03-27 | 1975-03-19 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6043481A (en) * | 1983-08-19 | 1985-03-08 | 旭硝子株式会社 | Sputtering method and device |
| FR2551460A1 (en) * | 1983-09-02 | 1985-03-08 | Leybold Heraeus Gmbh & Co Kg | METHOD AND DEVICE FOR REACTIVE SPRAY DEPOSITION OF METAL COMPOUNDS AND SEMICONDUCTORS |
| JPS63303068A (en) * | 1987-06-03 | 1988-12-09 | Daido Steel Co Ltd | Substrate heating device |
| KR100392811B1 (en) * | 2001-08-14 | 2003-07-28 | 주식회사 삼원진공 | Multiple vacuum depositor of double chamber type |
| EP1486583A4 (en) * | 2002-02-26 | 2008-03-26 | Japan Science & Tech Agency | METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR OR INSULATING / METALLIC LAMINAR COMPOSITE BEAM |
| US7638019B2 (en) | 2002-02-26 | 2009-12-29 | Japan Science And Technology Agency | Method and device for manufacturing semiconductor or insulator-metallic laminar composite cluster |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5711953B2 (en) | 1982-03-08 |
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