JPS6483655A - Sputtering film formation - Google Patents

Sputtering film formation

Info

Publication number
JPS6483655A
JPS6483655A JP23941587A JP23941587A JPS6483655A JP S6483655 A JPS6483655 A JP S6483655A JP 23941587 A JP23941587 A JP 23941587A JP 23941587 A JP23941587 A JP 23941587A JP S6483655 A JPS6483655 A JP S6483655A
Authority
JP
Japan
Prior art keywords
metal
oxide film
stepped part
film formation
cracking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23941587A
Other languages
Japanese (ja)
Other versions
JPH0756070B2 (en
Inventor
Atsushi Iijima
Seishi Yari
Tsutomu Koyanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP23941587A priority Critical patent/JPH0756070B2/en
Publication of JPS6483655A publication Critical patent/JPS6483655A/en
Publication of JPH0756070B2 publication Critical patent/JPH0756070B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Magnetic Heads (AREA)

Abstract

PURPOSE:To form a metal-oxide film free from cracking and peeling over the whole region including a stepped part, by regulating the inside of a chamber so that it has an atmosphere in which specific amounts of oxygen are incorporated to Ar gas in a film formation by means of bias sputtering. CONSTITUTION:At the time of forming a metal-oxide film on a substrate having a stepped part by using the metal oxide as a target by means of bias sputtering, the inside of a chamber is regulated so that it has an atmosphere in which >10-25%, by volume ratio, of oxygen is incorporated to Ar gas. By this method, the metal-oxide film of stoichiometric ratio can be formed on the substrate over the whole reion including the stepped part. This metal-oxide film causes practically no problem of cracking, peeling, etc.
JP23941587A 1987-09-22 1987-09-22 Sputtering method Expired - Lifetime JPH0756070B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23941587A JPH0756070B2 (en) 1987-09-22 1987-09-22 Sputtering method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23941587A JPH0756070B2 (en) 1987-09-22 1987-09-22 Sputtering method

Publications (2)

Publication Number Publication Date
JPS6483655A true JPS6483655A (en) 1989-03-29
JPH0756070B2 JPH0756070B2 (en) 1995-06-14

Family

ID=17044433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23941587A Expired - Lifetime JPH0756070B2 (en) 1987-09-22 1987-09-22 Sputtering method

Country Status (1)

Country Link
JP (1) JPH0756070B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03107802A (en) * 1989-09-21 1991-05-08 Res Dev Corp Of Japan Multilayered film
US6322712B1 (en) 1999-09-01 2001-11-27 Micron Technology, Inc. Buffer layer in flat panel display
EP1736968A1 (en) * 2005-06-24 2006-12-27 Heraeus, Inc. Enhanced oxygen non-stoichiometry compensation for thin films
WO2009044474A1 (en) * 2007-10-04 2009-04-09 Canon Anelva Corporation Vacuum thin film forming apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03107802A (en) * 1989-09-21 1991-05-08 Res Dev Corp Of Japan Multilayered film
US6322712B1 (en) 1999-09-01 2001-11-27 Micron Technology, Inc. Buffer layer in flat panel display
US6471879B2 (en) 1999-09-01 2002-10-29 Micron Technology, Inc. Buffer layer in flat panel display
US7247227B2 (en) 1999-09-01 2007-07-24 Micron Technology, Inc. Buffer layer in flat panel display
EP1736968A1 (en) * 2005-06-24 2006-12-27 Heraeus, Inc. Enhanced oxygen non-stoichiometry compensation for thin films
WO2009044474A1 (en) * 2007-10-04 2009-04-09 Canon Anelva Corporation Vacuum thin film forming apparatus

Also Published As

Publication number Publication date
JPH0756070B2 (en) 1995-06-14

Similar Documents

Publication Publication Date Title
JPS6447379A (en) Preparation of calcium-dependent oxygenation enzyme
JPS5435178A (en) Ultrafine particle depositing apparatus
JPS5360310A (en) Continuous annealing method for titanium and titanium alloy
JPS5419663A (en) Forming method of insulating films
JPS55130805A (en) Manufacture of zinc selenide
JPS5772307A (en) Alloy film material for magneticstorage and manufacture of the same
JPS52151555A (en) Manufacture of luminous screen
JPS53125760A (en) Manufacture for gas discharging panel
JPS544567A (en) Growing apparatus of ion beam crystal
JPS55104919A (en) Manufacture of zinc oxide thin film
JPS5645827A (en) Forming method for transparent ferroelectric thin film
JPS6462456A (en) Formation of thin silicon nitride film
JPS5635408A (en) Manufacture of thin film of 3-5 group compound
JPS52139373A (en) Treating method for compound semiconductor
JPS53114349A (en) Impurity diffusing method
JPS5439356A (en) Method of producing zinc dust
JPS6442323A (en) Production of thin film of ferroelectrics
JPS53148155A (en) Method of controlling dissolved oxygen in aeration tank
JPS53105966A (en) Growth method for epitaxial layer
JPS5428584A (en) Manufacture of semiconductor laser element
JPS5246308A (en) Process for producing steel for powder forging
JPS6431959A (en) Formation of thin compound film
JPS5382263A (en) Epitaxial growth method
JPS53124062A (en) Multi-layer epitaxial growing method
JPS6421054A (en) Film forming method

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term
FPAY Renewal fee payment

Year of fee payment: 13

Free format text: PAYMENT UNTIL: 20080614