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Seiko Instruments Inc
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Seiko Instruments and Electronics Ltd
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Application filed by Seiko Instruments and Electronics LtdfiledCriticalSeiko Instruments and Electronics Ltd
Priority to JP10467577ApriorityCriticalpatent/JPS5437686A/en
Publication of JPS5437686ApublicationCriticalpatent/JPS5437686A/en
PURPOSE: To avoid the speed slow down due to the storage of minority carrier, by forming the collector region with ion implantation and by leaving the defective crystal region caused, in NPN inverse transistor for IIL driving in which the collector region is exposed on the surface of the semiconductor substrate.