JPS54977A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS54977A
JPS54977A JP6716177A JP6716177A JPS54977A JP S54977 A JPS54977 A JP S54977A JP 6716177 A JP6716177 A JP 6716177A JP 6716177 A JP6716177 A JP 6716177A JP S54977 A JPS54977 A JP S54977A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
atoms
keep
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6716177A
Other languages
Japanese (ja)
Other versions
JPS5738187B2 (en
Inventor
Seiichiro Takabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6716177A priority Critical patent/JPS54977A/en
Publication of JPS54977A publication Critical patent/JPS54977A/en
Publication of JPS5738187B2 publication Critical patent/JPS5738187B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00—Energy generation of nuclear origin

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE: To keep the performance of device and to improve the thickness so that the surface concentration of the N+ layer of the rear side of a substrate is 5 x 1018 to 5 x 1020 atoms/cm2.
COPYRIGHT: (C)1979,JPO&Japio
JP6716177A 1977-06-06 1977-06-06 Manufacture for semiconductor device Granted JPS54977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6716177A JPS54977A (en) 1977-06-06 1977-06-06 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6716177A JPS54977A (en) 1977-06-06 1977-06-06 Manufacture for semiconductor device

Publications (2)

Publication Number Publication Date
JPS54977A true JPS54977A (en) 1979-01-06
JPS5738187B2 JPS5738187B2 (en) 1982-08-13

Family

ID=13336884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6716177A Granted JPS54977A (en) 1977-06-06 1977-06-06 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS54977A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11482383B2 (en) 2017-08-31 2022-10-25 Panasonic Intellectual Property Management Co., Ltd. Electrolytic capacitor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60172359U (en) * 1984-04-20 1985-11-15 株式会社精工舎 Printed board

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3098954A (en) * 1960-04-27 1963-07-23 Texas Instruments Inc Mesa type transistor and method of fabrication thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3098954A (en) * 1960-04-27 1963-07-23 Texas Instruments Inc Mesa type transistor and method of fabrication thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11482383B2 (en) 2017-08-31 2022-10-25 Panasonic Intellectual Property Management Co., Ltd. Electrolytic capacitor

Also Published As

Publication number Publication date
JPS5738187B2 (en) 1982-08-13

Similar Documents

Publication Publication Date Title
JPS542077A (en) Semiconductor switching element
JPS5356972A (en) Mesa type semiconductor device
JPS52109369A (en) Manufacture of semiconductor device
JPS5363871A (en) Production of semiconductor device
JPS5418669A (en) Manufacture of semiconductor device
JPS5265664A (en) Selective introduction of impurity in compound semiconductor substrate
JPS534469A (en) Semiconductor device
JPS52131462A (en) Manufacture of semiconductor device
JPS543473A (en) Manufacture of semiconductor device
JPS53139476A (en) Manufacture of semiconductor device
JPS5267271A (en) Formation of through-hole onto semiconductor substrate
JPS5387672A (en) Semiconductor device
JPS532071A (en) Manufacture of semiconductor device
JPS5279869A (en) Semiconductor substrate
JPS5384712A (en) Photographic material
JPS5384567A (en) Manufacture for semiconductor device
JPS547867A (en) Manufacture for semiconductor device
JPS5289467A (en) Semiconductor device
JPS53148982A (en) Manufacture of semiconductor device
JPS53121483A (en) Semiconductor device
JPS53133380A (en) Manufacture of semiconductor element
JPS5394869A (en) Manufacture of semiconductor device
JPS5418670A (en) Manufacture of semiconductor device
JPS547879A (en) Manufacture for semiconductor device
JPS53147475A (en) Semiconductor device