JPS544066A - Growing method of silicon crystal under low pressure - Google Patents

Growing method of silicon crystal under low pressure

Info

Publication number
JPS544066A
JPS544066A JP6891877A JP6891877A JPS544066A JP S544066 A JPS544066 A JP S544066A JP 6891877 A JP6891877 A JP 6891877A JP 6891877 A JP6891877 A JP 6891877A JP S544066 A JPS544066 A JP S544066A
Authority
JP
Japan
Prior art keywords
low pressure
under low
silicon crystal
growing method
crystal under
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6891877A
Other languages
Japanese (ja)
Inventor
Masahiko Kogirima
Hiroji Saida
Ryokichi Takahashi
Masao Kawamura
Michiyoshi Maki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6891877A priority Critical patent/JPS544066A/en
Publication of JPS544066A publication Critical patent/JPS544066A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To grow a lot of silicon thin film on the substrate under a low pressure, by placing the major plane of the substrate orthogonally and in parallel with gas flow, and by surrounding the circumference with silicon of which cross section is approximately a square or with a quartz tube.
JP6891877A 1977-06-13 1977-06-13 Growing method of silicon crystal under low pressure Pending JPS544066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6891877A JPS544066A (en) 1977-06-13 1977-06-13 Growing method of silicon crystal under low pressure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6891877A JPS544066A (en) 1977-06-13 1977-06-13 Growing method of silicon crystal under low pressure

Publications (1)

Publication Number Publication Date
JPS544066A true JPS544066A (en) 1979-01-12

Family

ID=13387504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6891877A Pending JPS544066A (en) 1977-06-13 1977-06-13 Growing method of silicon crystal under low pressure

Country Status (1)

Country Link
JP (1) JPS544066A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58133932U (en) * 1982-03-04 1983-09-09 富士通株式会社 Compound semiconductor vapor phase growth equipment
JPS60106766A (en) * 1983-11-10 1985-06-12 Tsukiyama Tekkosho:Kk Wire end clamping and drawing-out device in winding machine
JPS6232073U (en) * 1985-08-08 1987-02-25
JPH05206034A (en) * 1991-08-09 1993-08-13 Applied Materials Inc Method for low-temperature and high- pressure vapor deposition of wafer
JPH05259146A (en) * 1992-03-09 1993-10-08 Hitachi Ltd Semiconductor manufacturing apparatus
US5614257A (en) * 1991-08-09 1997-03-25 Applied Materials, Inc Low temperature, high pressure silicon deposition method
US7026219B2 (en) 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
US9443730B2 (en) 2014-07-18 2016-09-13 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US9837271B2 (en) 2014-07-18 2017-12-05 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58133932U (en) * 1982-03-04 1983-09-09 富士通株式会社 Compound semiconductor vapor phase growth equipment
JPS60106766A (en) * 1983-11-10 1985-06-12 Tsukiyama Tekkosho:Kk Wire end clamping and drawing-out device in winding machine
JPS6232073U (en) * 1985-08-08 1987-02-25
JPH05206034A (en) * 1991-08-09 1993-08-13 Applied Materials Inc Method for low-temperature and high- pressure vapor deposition of wafer
US5607724A (en) * 1991-08-09 1997-03-04 Applied Materials, Inc. Low temperature high pressure silicon deposition method
US5614257A (en) * 1991-08-09 1997-03-25 Applied Materials, Inc Low temperature, high pressure silicon deposition method
US5874129A (en) * 1991-08-09 1999-02-23 Applied Materials, Inc. Low temperature, high pressure silicon deposition method
JPH05259146A (en) * 1992-03-09 1993-10-08 Hitachi Ltd Semiconductor manufacturing apparatus
US7026219B2 (en) 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
US9443730B2 (en) 2014-07-18 2016-09-13 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US9837271B2 (en) 2014-07-18 2017-12-05 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming

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