JPS5326569A - Layer thickness control me thod of epitaxial growth layer - Google Patents

Layer thickness control me thod of epitaxial growth layer

Info

Publication number
JPS5326569A
JPS5326569A JP10056776A JP10056776A JPS5326569A JP S5326569 A JPS5326569 A JP S5326569A JP 10056776 A JP10056776 A JP 10056776A JP 10056776 A JP10056776 A JP 10056776A JP S5326569 A JPS5326569 A JP S5326569A
Authority
JP
Japan
Prior art keywords
layer
epitaxial growth
layer thickness
thod
thickness control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10056776A
Other languages
Japanese (ja)
Inventor
Katsuo Sugawara
Noriyoshi Nakazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10056776A priority Critical patent/JPS5326569A/en
Publication of JPS5326569A publication Critical patent/JPS5326569A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:In case of epitaxial growth of a Si layer on a Si bustrate in a quartz cylindrical pipe, a dummy substrate of sapphier, etc., where Si monocrystal adheres on the surface is enclosed, and a growth speed where Si layer grows on the Si substrate and the dummy substrate are made equivalent. As a reuslt, a layer thickness on the dummy substrate is notified by interference light, thereby controlling the layer thickness accurately.
JP10056776A 1976-08-25 1976-08-25 Layer thickness control me thod of epitaxial growth layer Pending JPS5326569A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10056776A JPS5326569A (en) 1976-08-25 1976-08-25 Layer thickness control me thod of epitaxial growth layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10056776A JPS5326569A (en) 1976-08-25 1976-08-25 Layer thickness control me thod of epitaxial growth layer

Publications (1)

Publication Number Publication Date
JPS5326569A true JPS5326569A (en) 1978-03-11

Family

ID=14277478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10056776A Pending JPS5326569A (en) 1976-08-25 1976-08-25 Layer thickness control me thod of epitaxial growth layer

Country Status (1)

Country Link
JP (1) JPS5326569A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5453684A (en) * 1977-09-16 1979-04-27 Philips Nv Treatment of single crystal
JPS60231599A (en) * 1984-04-27 1985-11-18 Matsushita Electric Ind Co Ltd Gas shield arc welding wire
JPH01249291A (en) * 1988-03-31 1989-10-04 Nippon Steel Weld Prod & Eng Co Ltd Plated wire for arc welding
JPH03124391A (en) * 1989-10-03 1991-05-27 Nippon Steel Weld Prod & Eng Co Ltd Copper plated steel wire for gas shielded arc welding
JPH03174739A (en) * 1989-09-01 1991-07-29 Nippon Telegr & Teleph Corp <Ntt> Measurement of growth situation of epitaxial growth layer
US5229303A (en) * 1989-08-29 1993-07-20 At&T Bell Laboratories Device processing involving an optical interferometric thermometry using the change in refractive index to measure semiconductor wafer temperature
JP2009054770A (en) * 2007-08-27 2009-03-12 Sumitomo Electric Ind Ltd Epitaxial substrate manufacturing method and manufacturing apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5453684A (en) * 1977-09-16 1979-04-27 Philips Nv Treatment of single crystal
JPS60231599A (en) * 1984-04-27 1985-11-18 Matsushita Electric Ind Co Ltd Gas shield arc welding wire
JPH01249291A (en) * 1988-03-31 1989-10-04 Nippon Steel Weld Prod & Eng Co Ltd Plated wire for arc welding
US5229303A (en) * 1989-08-29 1993-07-20 At&T Bell Laboratories Device processing involving an optical interferometric thermometry using the change in refractive index to measure semiconductor wafer temperature
JPH03174739A (en) * 1989-09-01 1991-07-29 Nippon Telegr & Teleph Corp <Ntt> Measurement of growth situation of epitaxial growth layer
JPH03124391A (en) * 1989-10-03 1991-05-27 Nippon Steel Weld Prod & Eng Co Ltd Copper plated steel wire for gas shielded arc welding
JP2009054770A (en) * 2007-08-27 2009-03-12 Sumitomo Electric Ind Ltd Epitaxial substrate manufacturing method and manufacturing apparatus

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