JPS5445573A - Pressure welding type semiconductor device - Google Patents

Pressure welding type semiconductor device

Info

Publication number
JPS5445573A
JPS5445573A JP11160577A JP11160577A JPS5445573A JP S5445573 A JPS5445573 A JP S5445573A JP 11160577 A JP11160577 A JP 11160577A JP 11160577 A JP11160577 A JP 11160577A JP S5445573 A JPS5445573 A JP S5445573A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
pressure welding
welding type
location shift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11160577A
Other languages
Japanese (ja)
Inventor
Akinori Ogata
Takashi Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11160577A priority Critical patent/JPS5445573A/en
Publication of JPS5445573A publication Critical patent/JPS5445573A/en
Pending legal-status Critical Current

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  • Die Bonding (AREA)

Abstract

PURPOSE: To increas the reliability by avoiding the location shift of the temperature compensating plate in contact with the element in pressure welding type semiconductor device.
CONSTITUTION: Teflon material 10 of ring shape is filled between the temperature compensation plate 12a and the surface protective layer 16, preventing the location shift. Or, by other mehthods, the location shift toward the major plane of the temperature compensation plate is perfectly made, causing no loss of the contact area with the element electrode 5. Thus, no forward voltage drop of the element 1 is increased and since the pressing stress is uniformly distributed, no element cracking is caused
COPYRIGHT: (C)1979,JPO&Japio
JP11160577A 1977-09-19 1977-09-19 Pressure welding type semiconductor device Pending JPS5445573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11160577A JPS5445573A (en) 1977-09-19 1977-09-19 Pressure welding type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11160577A JPS5445573A (en) 1977-09-19 1977-09-19 Pressure welding type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5445573A true JPS5445573A (en) 1979-04-10

Family

ID=14565572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11160577A Pending JPS5445573A (en) 1977-09-19 1977-09-19 Pressure welding type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5445573A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100737A (en) * 1980-12-16 1982-06-23 Toshiba Corp Semiconductor device
US8745571B2 (en) 2011-02-14 2014-06-03 International Business Machines Corporation Analysis of compensated layout shapes

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100737A (en) * 1980-12-16 1982-06-23 Toshiba Corp Semiconductor device
US4587550A (en) * 1980-12-16 1986-05-06 Tokyo Shibaura Denki Kabushiki Kaisha Press-packed semiconductor device with lateral fixing member
US8745571B2 (en) 2011-02-14 2014-06-03 International Business Machines Corporation Analysis of compensated layout shapes

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