JPS5449063A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5449063A
JPS5449063A JP11631877A JP11631877A JPS5449063A JP S5449063 A JPS5449063 A JP S5449063A JP 11631877 A JP11631877 A JP 11631877A JP 11631877 A JP11631877 A JP 11631877A JP S5449063 A JPS5449063 A JP S5449063A
Authority
JP
Japan
Prior art keywords
substrate
type
film
oxidized film
impurity ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11631877A
Other languages
Japanese (ja)
Inventor
Keizo Kobayashi
Minetoshi Asaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11631877A priority Critical patent/JPS5449063A/en
Publication of JPS5449063A publication Critical patent/JPS5449063A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain a high-preformance MOS-IC at high yield by injecting impurity ions into a semiconductor substrate via an insulating film provided to the surface from its normal-line direction with the substrate surface selected to the (511) surface.
CONSTITUTION: At both the end parts of P-type Si substrate 7 with the (511) surface, P+-type regions are diffusion-formed, thick field oxidized film 6 is grown on it, and source and drain formation regions are removed. Next, thin gate oxidized film 8 is adhered to it, polycrystal Si gate electrode 4 is fitted to the center part, and the surface and flank are covered with an oxidized film. Then, electrode 4 is used as a mask for providing through holes to exposed parts of film 8, and N-type impurity ions are implanted into substrate 7 from the (511) direction of substrate 7 to generate a N-type region. Consequently, a chattering phenomenon is prevented from occurring and its yield improves
COPYRIGHT: (C)1979,JPO&Japio
JP11631877A 1977-09-27 1977-09-27 Semiconductor device and its manufacture Pending JPS5449063A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11631877A JPS5449063A (en) 1977-09-27 1977-09-27 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11631877A JPS5449063A (en) 1977-09-27 1977-09-27 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5449063A true JPS5449063A (en) 1979-04-18

Family

ID=14684011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11631877A Pending JPS5449063A (en) 1977-09-27 1977-09-27 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5449063A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61220424A (en) * 1985-03-27 1986-09-30 Toshiba Corp Manufacture of semiconductor device
JPS61178268U (en) * 1985-04-24 1986-11-07
JP4888387B2 (en) * 2005-11-18 2012-02-29 三菱電機株式会社 Elevator car lighting equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61220424A (en) * 1985-03-27 1986-09-30 Toshiba Corp Manufacture of semiconductor device
JPS61178268U (en) * 1985-04-24 1986-11-07
JP4888387B2 (en) * 2005-11-18 2012-02-29 三菱電機株式会社 Elevator car lighting equipment

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