JPS5451483A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5451483A JPS5451483A JP11684877A JP11684877A JPS5451483A JP S5451483 A JPS5451483 A JP S5451483A JP 11684877 A JP11684877 A JP 11684877A JP 11684877 A JP11684877 A JP 11684877A JP S5451483 A JPS5451483 A JP S5451483A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- type
- groove
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To decrease occupied area, by providing grooves on a given area through the formation of the deposition layer on the entire substarate surface and by performing diffusion with extension while blocking the diffusion toward lateral direction in placing implanted layer on a semiconductor substrate.
CONSTITUTION: The N+ layer 2 being the implanted layer is deposited on the P type Si substrate 1, and the SiO2 film 3 and the Si3N4 film 4 cover on it, and depper groove than the layer 2 is formed by providng opening at a given area by etching. Next, P type impurity ions are implanted on the eaves of the groove, providing the channel stopper region 5 and forming the N+ type implanted layer 2' through extending the layer 2. At this time, the layer 2' is not extended toward lateral direction because of the presence of the groove and it is possible to narrower the oquppied area. After that, the films 3 and 4 are removed, N type layer 6 is epitaxially grown on the entire surface, it is covered with the SiO2 film 7 and the Si3N4 film 8, and the part on the groove is removed with heat treatment, producing isolation SiO2 film in the groove. Next, the film 8 is removed, and the N+ type collector layer 10, P type base layer 11, and N+ type emitter layer 12 are respectively formed by diffusion by taking the film 7 as a mask
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11684877A JPS5451483A (en) | 1977-09-30 | 1977-09-30 | Manufacture for semiconductor device |
| US05/931,007 US4219369A (en) | 1977-09-30 | 1978-08-04 | Method of making semiconductor integrated circuit device |
| DE19782840975 DE2840975A1 (en) | 1977-09-30 | 1978-09-20 | METHOD FOR PRODUCING AN INTEGRATED SEMICONDUCTOR CIRCUIT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11684877A JPS5451483A (en) | 1977-09-30 | 1977-09-30 | Manufacture for semiconductor device |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59054216A Division JPS59181552A (en) | 1984-03-23 | 1984-03-23 | Manufacture of semiconductor device |
| JP59054217A Division JPS59181553A (en) | 1984-03-23 | 1984-03-23 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5451483A true JPS5451483A (en) | 1979-04-23 |
Family
ID=14697116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11684877A Pending JPS5451483A (en) | 1977-09-30 | 1977-09-30 | Manufacture for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5451483A (en) |
-
1977
- 1977-09-30 JP JP11684877A patent/JPS5451483A/en active Pending
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