JPS5451486A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5451486A JPS5451486A JP11684777A JP11684777A JPS5451486A JP S5451486 A JPS5451486 A JP S5451486A JP 11684777 A JP11684777 A JP 11684777A JP 11684777 A JP11684777 A JP 11684777A JP S5451486 A JPS5451486 A JP S5451486A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- groove
- layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To increase the degree of circuit integration, by decreasing the allowance of alignment so that no extension toward lateral direction is caused even at the process accompanied by heat treatment, by growing the semiconductor layer being the collector region on the semiconductor substrate and by separating it with deeper groove than the layer.
CONSTITUTION: The N+ region 2 is deposited on the entire surface of P type Si substrate 1, and it is covered with the SiO2 film 3 and the Si3N4 film 4, forming the groove 5 on the substrate 1 with etching and the region 2 is separated in island shape. Next, the P3 type region 6 is formed at the bottom of the groove 5 with ion implantation and the N type layer 8 is epitaxially grown on the entire surface. The growing layer 10 in concave shape is caused on the groove 5 and the flat growing layer 10 is caused on the island region. After that, the SiO2 film 11 and the Si3N4 film 12 are coated on the entire surface, and opening is made at the given region and the N type impurity is deposited. Next, this is extended, forming into the N+ type region 16 for N+ type collector electrode pick up reaching the region 2 with diffusion. Thus, since the groove 5 is present when the region 16 is made, the region 2 is not extended toward lateral direction
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11684777A JPS5451486A (en) | 1977-09-30 | 1977-09-30 | Manufacture for semiconductor device |
| US05/931,007 US4219369A (en) | 1977-09-30 | 1978-08-04 | Method of making semiconductor integrated circuit device |
| DE19782840975 DE2840975A1 (en) | 1977-09-30 | 1978-09-20 | METHOD FOR PRODUCING AN INTEGRATED SEMICONDUCTOR CIRCUIT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11684777A JPS5451486A (en) | 1977-09-30 | 1977-09-30 | Manufacture for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5451486A true JPS5451486A (en) | 1979-04-23 |
Family
ID=14697093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11684777A Pending JPS5451486A (en) | 1977-09-30 | 1977-09-30 | Manufacture for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5451486A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50138769A (en) * | 1974-04-23 | 1975-11-05 |
-
1977
- 1977-09-30 JP JP11684777A patent/JPS5451486A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50138769A (en) * | 1974-04-23 | 1975-11-05 |
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