JPS5615077A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5615077A
JPS5615077A JP9055579A JP9055579A JPS5615077A JP S5615077 A JPS5615077 A JP S5615077A JP 9055579 A JP9055579 A JP 9055579A JP 9055579 A JP9055579 A JP 9055579A JP S5615077 A JPS5615077 A JP S5615077A
Authority
JP
Japan
Prior art keywords
film
gate electrode
silicon dioxide
opening
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9055579A
Other languages
Japanese (ja)
Inventor
Kazunari Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9055579A priority Critical patent/JPS5615077A/en
Publication of JPS5615077A publication Critical patent/JPS5615077A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To form deeply a high density impurity layer in a semiconductor substrate without forming in the bases of source and drain regions by a method wherein an opening to form a gate electrode is prepared on a polycrystalline Si layer using a mask, and an impurity is introduced only to the portion of substrate under the gate. CONSTITUTION:A silicon dioxide film 32 is formed on the surface of a p-type silicon semiconductor substrate 10, a polycrystalline layer 34 is formed on it by vapor growth and a silicon dioxide film 36 and a silicon nitride film 38 are formed on it. An opening is made at the portion of the silicon nitride film 38 to form a gate electrode using photo resists 40. Then a p-type impurity boron B is introduced to a channel region forming part by ion implantation. A silicon dioxide film 36a is formed thickly only at the opening part by thermal oxidation, and etching is performed reaching to the film 36 to remain the thick oxide film 36a as a mask. Finally a gate electrode 16 is formed by etching.
JP9055579A 1979-07-17 1979-07-17 Manufacture of semiconductor device Pending JPS5615077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9055579A JPS5615077A (en) 1979-07-17 1979-07-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9055579A JPS5615077A (en) 1979-07-17 1979-07-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5615077A true JPS5615077A (en) 1981-02-13

Family

ID=14001647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9055579A Pending JPS5615077A (en) 1979-07-17 1979-07-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5615077A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05121737A (en) * 1991-07-15 1993-05-18 Nec Corp Manufacture of semiconductor device
US5888873A (en) * 1996-11-06 1999-03-30 Advanced Micro Devices, Inc. Method of manufacturing short channel MOS devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05121737A (en) * 1991-07-15 1993-05-18 Nec Corp Manufacture of semiconductor device
US5888873A (en) * 1996-11-06 1999-03-30 Advanced Micro Devices, Inc. Method of manufacturing short channel MOS devices

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