JPS545380A - Impurity introducing method for semiconductor wafer and its jig - Google Patents

Impurity introducing method for semiconductor wafer and its jig

Info

Publication number
JPS545380A
JPS545380A JP6982977A JP6982977A JPS545380A JP S545380 A JPS545380 A JP S545380A JP 6982977 A JP6982977 A JP 6982977A JP 6982977 A JP6982977 A JP 6982977A JP S545380 A JPS545380 A JP S545380A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
jig
wafer
introducing method
impurity introducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6982977A
Other languages
Japanese (ja)
Inventor
Isao Shimura
Norio Yoshihara
Ichiro Takei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6982977A priority Critical patent/JPS545380A/en
Publication of JPS545380A publication Critical patent/JPS545380A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To enable the use of a thin wafer, by sealing up the wafer into the upper and lower frame bodies containing the groove which supports two sheets two sheets of the semiconductor wafer oppositely inside, supplrting the frame bodies via the basket-type frame body to provide them into process furnace and applying a deposition only to the outer side surface of the exposed wafer.
COPYRIGHT: (C)1979,JPO&Japio
JP6982977A 1977-06-15 1977-06-15 Impurity introducing method for semiconductor wafer and its jig Pending JPS545380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6982977A JPS545380A (en) 1977-06-15 1977-06-15 Impurity introducing method for semiconductor wafer and its jig

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6982977A JPS545380A (en) 1977-06-15 1977-06-15 Impurity introducing method for semiconductor wafer and its jig

Publications (1)

Publication Number Publication Date
JPS545380A true JPS545380A (en) 1979-01-16

Family

ID=13414038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6982977A Pending JPS545380A (en) 1977-06-15 1977-06-15 Impurity introducing method for semiconductor wafer and its jig

Country Status (1)

Country Link
JP (1) JPS545380A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01259528A (en) * 1988-04-08 1989-10-17 Hitachi Ltd Wafer support device for semiconductor wafer heat treatment equipment and semiconductor wafer heat treatment equipment
US5000371A (en) * 1987-08-24 1991-03-19 Cooper Industries, Inc. Method of producing a metallic interface
US5169453A (en) * 1989-03-20 1992-12-08 Toyoko Kagaku Co., Ltd. Wafer supporting jig and a decompressed gas phase growth method using such a jig

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5000371A (en) * 1987-08-24 1991-03-19 Cooper Industries, Inc. Method of producing a metallic interface
JPH01259528A (en) * 1988-04-08 1989-10-17 Hitachi Ltd Wafer support device for semiconductor wafer heat treatment equipment and semiconductor wafer heat treatment equipment
US5169453A (en) * 1989-03-20 1992-12-08 Toyoko Kagaku Co., Ltd. Wafer supporting jig and a decompressed gas phase growth method using such a jig

Similar Documents

Publication Publication Date Title
DE3169538D1 (en) Process and apparatus for the production of silicon bodies by continuous chemical vapor deposition
EP0072216A3 (en) The production of semiconductor devices by methods involving annealing
EP0159252A3 (en) Process for the production of semiconductor devices by using silicon-on-isolation techniques
ZA78727B (en) Fabrication process for semiconductor bodies
GB2003662A (en) Method for the stabilizing surface treatment of semiconductor bodies
JPS5246784A (en) Process for production of semiconductor device
JPS5249772A (en) Process for production of semiconductor device
JPS5419649A (en) Wafer holding jig for electrtolytic plating
JPS5434676A (en) Vapor growth method and apparatus for high-purity semiconductor layer
JPS5389675A (en) Jig pair for wafer transfer
JPS53116072A (en) Electrode forming method for semiconductor device
JPS5528792A (en) Improvement method of vacuum formation by organic silicon fluid
JPS5242365A (en) Tool for semiconductors
JPS5224462A (en) Surface treatment of silicone wafer
JPS52149968A (en) Heat treatment method of semiconductor wafers
JPS5240070A (en) Process for production of semiconductor device
JPS52135682A (en) Production of semiconductor element
JPS524498A (en) Method for the production of chromium oxide
JPS51140470A (en) Method of cutting semiconductor crystal
JPS542670A (en) Plasma etching method
JPS51151071A (en) Manufacturing method of a semiconductor apparatus
JPS53100769A (en) Semiconductor crystal growth apparatus
JPS51122067A (en) Process for hetero cyclic amine compounds
JPS53148982A (en) Manufacture of semiconductor device
JPS5230169A (en) Method for etching of silicon crystal