JPS5454572A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5454572A
JPS5454572A JP12097477A JP12097477A JPS5454572A JP S5454572 A JPS5454572 A JP S5454572A JP 12097477 A JP12097477 A JP 12097477A JP 12097477 A JP12097477 A JP 12097477A JP S5454572 A JPS5454572 A JP S5454572A
Authority
JP
Japan
Prior art keywords
gold
constitution
compression
bonding
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12097477A
Other languages
Japanese (ja)
Inventor
Takeshi Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12097477A priority Critical patent/JPS5454572A/en
Publication of JPS5454572A publication Critical patent/JPS5454572A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07353—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/331—Shapes of die-attach connectors
    • H10W72/334—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Die Bonding (AREA)

Abstract

PURPOSE: To assemble the deivce by providing rough surfaces on the main surface of element disposition base floor and thermo-compression-bonding the Si element by way of the gold or gold alloy layer.
CONSTITUTION: An element disposition base 12c is formed with orthogonal recesses 10a, 10b which comprise plating gold or silver on the root part of copper or its alloy and driving blade forms. According to this constitution, the compression bonding area increases at the time of compression bonding gold or gold alloy foil and therefore pression force and temperature may be lowered and assembling may be performed without impairing element characteristics
COPYRIGHT: (C)1979,JPO&Japio
JP12097477A 1977-10-11 1977-10-11 Semiconductor device Pending JPS5454572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12097477A JPS5454572A (en) 1977-10-11 1977-10-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12097477A JPS5454572A (en) 1977-10-11 1977-10-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5454572A true JPS5454572A (en) 1979-04-28

Family

ID=14799633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12097477A Pending JPS5454572A (en) 1977-10-11 1977-10-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5454572A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5291572A (en) * 1993-01-14 1994-03-01 At&T Bell Laboratories Article comprising compression bonded parts

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5291572A (en) * 1993-01-14 1994-03-01 At&T Bell Laboratories Article comprising compression bonded parts

Similar Documents

Publication Publication Date Title
JPS5454572A (en) Semiconductor device
JPS52143785A (en) Semiconductor device
JPS5382168A (en) Lead frame for semiconductor device
JPS5411690A (en) Semiconductor laser unit
JPS523383A (en) Manufacturing method of semiconductor device electrode
JPS5318957A (en) Electrode structure of semiconductor device
JPS5399782A (en) Semiconductor integrated circuit device and its manufacture
JPS5412270A (en) Integrated circuit rackage
JPS57138160A (en) Formation of electrode
JPS5268388A (en) Semiconductor integrated circuit
JPS5441666A (en) Semiconductor integrated circuit element
JPS5456766A (en) Semiconductor device
JPS5458380A (en) Zener diode
JPS53117970A (en) Resin seal type semiconductor device
JPS5295175A (en) Pellet bonding
JPS56142659A (en) Semiconductor device
JPS54124990A (en) Semiconductor device
JPS547271A (en) Semiconductor electrode structure
JPS53116073A (en) Semiconductor device
JPS52150965A (en) Semiconductor device
JPS52103983A (en) Semiconductor integrated circuit
JPS52155986A (en) Semiconductor device
JPS5414159A (en) Manufacture for semiconductor device
JPS57109350A (en) Semiconductor device
JPS57109347A (en) Semiconductor device