JPS545657A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS545657A JPS545657A JP7140577A JP7140577A JPS545657A JP S545657 A JPS545657 A JP S545657A JP 7140577 A JP7140577 A JP 7140577A JP 7140577 A JP7140577 A JP 7140577A JP S545657 A JPS545657 A JP S545657A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- size distribution
- grain size
- glass powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thyristors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7140577A JPS545657A (en) | 1977-06-15 | 1977-06-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7140577A JPS545657A (en) | 1977-06-15 | 1977-06-15 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS545657A true JPS545657A (en) | 1979-01-17 |
Family
ID=13459564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7140577A Pending JPS545657A (en) | 1977-06-15 | 1977-06-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS545657A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114171416A (zh) * | 2022-02-14 | 2022-03-11 | 浙江里阳半导体有限公司 | 一种tvs芯片及其玻璃钝化方法、制造方法 |
-
1977
- 1977-06-15 JP JP7140577A patent/JPS545657A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114171416A (zh) * | 2022-02-14 | 2022-03-11 | 浙江里阳半导体有限公司 | 一种tvs芯片及其玻璃钝化方法、制造方法 |
| CN114171416B (zh) * | 2022-02-14 | 2022-06-03 | 浙江里阳半导体有限公司 | 一种tvs芯片及其玻璃钝化方法、制造方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5266376A (en) | Device and manufacture of resin body type semiconductor | |
| JPS534382A (en) | High frequency illuminator | |
| JPS5410682A (en) | Production of semiconductor elements | |
| JPS5269592A (en) | Semiconductor luminescent element | |
| JPS5228868A (en) | Semiconductor device | |
| JPS538072A (en) | Semiconductor device | |
| JPS52120773A (en) | Semiconductor element | |
| JPS5267838A (en) | High frequency heater | |
| JPS52141565A (en) | Manufacture of semiconductor unit | |
| JPS544062A (en) | Wafer extender | |
| JPS51137425A (en) | Optical device | |
| JPS5320376A (en) | Large dose radiation measuring system of wide dose region | |
| JPS5346937A (en) | Preparation of n-p-aminobenzoyl-n,-p-aminourea | |
| JPS52127750A (en) | Production of semiconductor unit | |
| JPS5394876A (en) | Manufacture of semiconductor device | |
| JPS5323906A (en) | 6-methyl-3-methylene-1,6-octadiene and its preparation | |
| JPS5373976A (en) | Manufacture for schottky barrier type semiconductor device | |
| JPS546790A (en) | Semiconductor laser unit and its manufacture | |
| JPS5418280A (en) | Resin sealed semiconductor device | |
| JPS53132534A (en) | Vanillylacylamide and antioxidant containing the same | |
| JPS5396671A (en) | Manufacture of semiconductor device | |
| JPS53104155A (en) | Manufacture for semiconductor device | |
| JPS5371590A (en) | Manufacture of photo transistor | |
| JPS5432067A (en) | Semiconductor device and its manufacture | |
| JPS53105977A (en) | Manufacture of semiconductor device |